Stacked-Deck Memory Control for Sneak-Current Mitigation
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Solution Overview
Problem
Existing memory devices face challenges in performing reliable write operations due to sneak currents exceeding preset currents, leading to errors in data storage and retrieval.
Innovation Solution
A memory device with a control circuit that measures sneak currents through adjacent decks and performs a preparation operation by transferring data to a buffer and writing reset data when sneak currents exceed a threshold, ensuring normal read/write operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple decks are stacked in a memory cell array to increase storage capacity, then the storage capacity is improved, but sneak currents flow between adjacent decks causing data errors
Solution Approach 1:
The control circuit performs a preparation operation before the normal read/write operation. When a sneak current is detected in an adjacent deck, the system first executes a preparation operation to clear the sneak current path, then proceeds with the normal operation. This preliminary action prevents the sneak current from interfering with data integrity during subsequent read/write operations.
Solution Approach 2:
The current detection circuit continuously monitors sneak currents in adjacent decks and provides feedback to the control circuit. Based on this feedback, the control circuit determines whether a preparation operation is needed before executing read/write commands, ensuring that sneak currents are addressed in real-time to maintain data integrity.
2Reliability
If a preparation operation is executed to clear sneak currents, then data integrity is improved, but operation time increases
Solution Approach 1:
The system uses feedback from the current detection circuit to determine when a preparation operation is actually needed. The control circuit monitors sneak current levels and only executes the preparation operation when sneak currents exceed a threshold, avoiding unnecessary operations and minimizing time loss while ensuring data integrity when required.
3Reliability
If sneak current measurement is performed before read/write operations, then interference between decks is reduced, but device complexity increases
Solution Approach 1:
The current detection circuit is integrated into the existing memory device structure and shares resources with the control circuit. The preparation operation uses the same read/write infrastructure (word lines, bit lines, memory cells) to clear sneak currents, making the system multi-functional without requiring entirely separate dedicated hardware for each function.
Data Source
AI summary
A memory device may include a memory cell array in which a plurality of decks are stacked, a control circuit configured to perform a read or write operation on a target deck of the plurality of decks, a current detection circuit configured to measure a sneak current flowing through at least one deck among the plurality of decks, the at least one deck being adjacent to the target deck and a buffer configured to store data transferred from memory cells of the at least one deck, wherein the control circuit is configured to execute a read or write command to perform the read or write operation on the target deck after the sneak current flowing through the at least one deck is measured.