Memory Source-Bias Temperature Compensation for Read and Program Verify
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Solution Overview
Problem
Memory devices experience increased bit flip errors and reduced reliability due to cross-temperature effects, which current temperature compensation methods for bitline voltage signals fail to adequately address, especially in multi-plane operations, leading to insufficient read window budgets and errors.
Innovation Solution
Implementing source bias temperature compensation by adjusting the source voltage signal based on temperature measurements, using a temperature compensation value to modify the source voltage signal during read and program verify operations, while keeping the bitline voltage signal constant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current temperature compensation methods for bitline voltage signals are used, then some temperature effects are addressed, but cross-temperature effects during multi-plane operations cause increased bit flip errors and insufficient read window budgets
Solution Approach 1:
The patent changes the voltage parameter from bitline voltage to source voltage, adjusting the source voltage based on temperature to compensate for cross-temperature effects. This parameter change resolves the contradiction by providing adequate read window budgets and reducing bit flip errors during multi-plane operations.
2Stability of the object's composition
If bitline voltage signal temperature compensation is applied, then some temperature stability is achieved, but read window budgets remain insufficient and errors increase
Solution Approach 1:
The patent changes the compensation parameter from bitline voltage to source voltage, which provides better string current stability and adequate read window budgets during multi-plane operations, resolving the contradiction between stability and precision.
3Productivity
If standard read and program verify operations are performed without source bias adjustment, then operation speed is maintained, but cell-to-cell interference increases and errors occur
Solution Approach 1:
The patent dynamically adjusts the source voltage parameter based on temperature during read and program verify operations, reducing cell-to-cell interference and bit flip errors while maintaining operation speed through efficient temperature-compensated voltage adjustment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes string current and reduces errors by increasing the drain-to-source voltage differential, enhancing read and program verify operations' reliability and reducing cell-to-cell interference.
Implementation Method 1
control logic of the memory device adjusts a source voltage signal based on a temperature to perform source bias temperature compensation for read and program verify operations
Implementation Method 2
This approach stabilizes string current and reduces errors by increasing the drain-to-source voltage differential
Data Source
AI summary
Control logic in a memory device receives a request to perform a memory access operation on a memory array of the memory device and determines an operating temperature of the memory device. The control logic further modifies a default magnitude of a source voltage signal based on the operating temperature to form a modified source voltage signal, causes the modified source voltage signal to be applied to the memory array, and performs the memory access operation on the memory array.