3D Memory Source Line Annealing for Uniform Impurity Activation
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Solution Overview
Problem
In semiconductor memory devices, impurities in the source line around pillars adjacent to other members are not sufficiently activated, leading to inefficiencies in activating impurities in the source line connected to the upper end portion of the pillar.
Innovation Solution
The semiconductor memory device is manufactured by forming a semiconductor layer with impurities, followed by annealing treatment using laser light to activate the impurities, ensuring thorough activation of the source line impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser light is emitted from above the semiconductor memory device to activate impurities in the source line, then impurity activation is achieved, but impurities in the source line around pillars adjacent to other members are not sufficiently activated
Solution Approach 1:
The patent applies local quality by forming a light-reflective film in specific regions (such as regions adjacent to pillars) to locally enhance light intensity. This targeted approach ensures that impurities in the source line around pillars adjacent to other members are sufficiently activated, while maintaining effective activation in other regions through the original top-down laser irradiation method.
2Reliability
If laser light irradiation is used to activate impurities, then activation is achieved, but the activation is not sufficient in regions adjacent to pillars
Solution Approach 1:
A light-reflective film is formed in specific regions where enhanced activation is needed (such as regions adjacent to pillars). This film reflects laser light back onto the source line in these specific areas, creating local intensity enhancement that improves activation efficiency and uniformity across different regions of the device.
Solution Approach 2:
The light-reflective film acts as an intermediary element that modifies the laser light path. By positioning this film in strategic locations, it reflects and redirects laser energy to specific regions that require enhanced impurity activation, thereby achieving more uniform activation across the entire source line structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The activation of impurities in the source line is enhanced, improving the efficiency and performance of the semiconductor memory device.
Implementation Method 1
laser light or the like may be emitted from above the semiconductor memory device
Implementation Method 2
annealing treatment using laser light to activate the impurities
Data Source
Figure 1A~1B
Figure 2A~2C
Figure 3A~3C
AI summary
According to one embodiment, a semiconductor memory device (1) includes a stacked body (LM) in which a plurality of first conductive layers (WL) and a plurality of insulating layers (OL) are alternately stacked one by one; a pillar (PL) that includes a semiconductor layer (CN) extending in the stacked body (LM) in a stacking direction of the stacked body (LM); a first layer (SL) that is arranged above the stacked body (LM) and has a semiconductor as a main component; and a second layer (TS) that is arranged above the first layer (SL) and has a metal as a main component, in which the pillar (PL) penetrates the first layer (SL), and the semiconductor layer (CN) protrudes into the second layer (TS).