3D Memory Stack Support Structure to Minimize Bending
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Solution Overview
Problem
Current memory devices face challenges in achieving structural stability during manufacturing, which can lead to instability and performance issues in three-dimensional memory cell arrays.
Innovation Solution
The proposed solution involves a stack structure with alternately stacked conductive and insulating layers, including first and second plugs with channel layers, and support structures that enhance structural stability by connecting insulating structures and plugs, improving the overall stability of the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If conventional manufacturing processes are used for three-dimensional memory cell arrays, then manufacturing simplicity is maintained, but structural stability deteriorates leading to bending and performance issues
Solution Approach 1:
The support structure is segmented into multiple functional components: an insulating structure portion providing electrical isolation and a plug portion providing mechanical support. This segmentation allows each component to be optimized for its specific function while working together to achieve overall structural stability in the three-dimensional memory cell array.
Solution Approach 2:
The support structure acts as an intermediary element between the insulating layers and the channel structures. By positioning the support structure at specific locations within the stack, it mediates the mechanical stresses and prevents bending of the fragile alternating insulating and conductive layer structure during manufacturing and operation.
2Stability of the object's composition
If the stack structure is made more robust to prevent bending, then structural stability improves, but manufacturing complexity increases
Solution Approach 1:
Rather than making the entire stack structure more robust uniformly, the support structure is strategically placed only at critical locations where bending is most likely to occur. The insulating and conductive layers maintain their original thin, flexible design elsewhere, preserving ease of manufacture while providing targeted structural reinforcement where needed.
Solution Approach 2:
The support structure combines two different materials with complementary properties: an insulating material for electrical isolation and a plug material (such as conductive fill material) for mechanical strength. This composite approach provides both electrical functionality and structural support without requiring changes to the entire stack structure.
Data Source
AI summary
There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a stack structure including a plurality of conductive layers and a plurality of insulating layers, which are alternately stacked in a first direction; a plurality of first plugs disposed in the stack structure, the plurality of first plugs extending in the first direction; and a first support structure disposed in the stack structure, the first support structure being adjacent to at least one of the plurality of first plugs. The first support structure includes an insulating structure and a second plug, which are stacked in the first direction. Each of the plurality of first plugs and the second plug includes a channel layer.