3D Memory Electrode Stack Gaps to Prevent Air Gap Closure
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Solution Overview
Problem
The challenge in manufacturing three-dimensional semiconductor memory devices is the difficulty in easily separating electrode layers, particularly due to the complexity of substituting sacrifice layers and the risk of air gap closure, which hinders the formation and separation of electrode layers.
Innovation Solution
The semiconductor device employs a stacked film structure with insulating films that penetrate and separate electrode layers, using sacrifice layers to create gaps that prevent air gap closure and facilitate easy separation of electrode layers, with specific dimensions and arrangements of these layers ensuring effective separation and formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If sacrifice layers are used to separate electrode layers, then electrode layer separation is enabled, but air gap closure occurs and manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the gap portion in the sacrifice layer before forming the electrode layers. This pre-formed gap structure prevents air gap closure during subsequent manufacturing steps while maintaining ease of electrode layer separation. The gap is created at specific positions in the sacrifice layer pattern, ensuring that when electrode layers are formed over the sacrifice layer, the gap regions remain open and prevent shorting between adjacent electrode layers.
Solution Approach 2:
The patent segments the sacrifice layer into multiple regions with different patterns - specifically creating gap portions at predetermined positions while maintaining solid portions at other positions. This segmentation allows the sacrifice layer to simultaneously provide mechanical support where needed and create separation gaps where required, enabling reliable electrode layer formation without air gap closure.
2Manufacturing precision
If complex sacrifice layer substitution is performed, then electrode layers can be formed, but manufacturing process complexity increases
Solution Approach 1:
The patent applies self-service by designing the sacrifice layer pattern to automatically create the necessary gap structures during the electrode layer formation process. The gap portions in the sacrifice layer self-organize to prevent air gap closure and guide electrode layer separation without requiring additional substitution steps. This reduces manufacturing process complexity while maintaining precise electrode layer formation.
3Reliability
If gap portions are created in sacrifice layers, then air gap closure is prevented, but separation difficulty increases
Solution Approach 1:
The patent applies local quality by creating gap portions only at specific predetermined positions in the sacrifice layer, rather than uniformly throughout. This localized gap creation prevents air gap closure at critical interfaces between electrode layers while maintaining the integrity and separability of the overall structure. The gap portions are strategically positioned to provide just enough separation to prevent shorting without complicating the manufacturing process.
Data Source
AI summary
A semiconductor device includes a substrate. The device includes a stacked film that includes a plurality of first electrode layers provided over the substrate and separated from each other in a first direction perpendicular to a front surface of the substrate and a plurality of second electrode layers provided over the first electrode layer and separated from each other in the first direction. The device further includes a first insulating film and a second insulating film that penetrate the plurality of first electrode layers and the plurality of second electrode layers in the first direction. The stacked film further includes a first gap portion including a first portion provided between the substrate and a lowermost layer of the plurality of first electrode layers and a second portion connected to the first portion, penetrating the plurality of first electrode layers in the first direction, between the first insulating film and the second insulating film.