Semiconductor Memory Stack With Phosphorus Gradient for Hydrogen Desorption
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing the influence of impurity atoms, such as phosphorus and hydrogen, on device performance, particularly in terms of desorption and reliability of memory cells and transistors.
Innovation Solution
The introduction of phosphorus atoms through ion implantation and subsequent annealing to desorb hydrogen atoms, creating a concentration gradient that enhances the performance of semiconductor layers and improves reliability by terminating dangling bonds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If phosphorus atoms are introduced through ion implantation to desorb hydrogen atoms, then the performance of semiconductor layers is improved, but the complexity of the manufacturing process increases
Solution Approach 1:
Phosphorus atoms are introduced through ion implantation before the final device formation to pre-desorb hydrogen atoms from semiconductor layers. This preliminary action prepares the semiconductor material for subsequent processing steps, improving device performance while managing process complexity through strategic timing of the treatment.
Solution Approach 2:
The concentration of phosphorus atoms is carefully controlled and optimized to achieve effective hydrogen desorption. By adjusting implantation energy, dose, and annealing conditions, the patent optimizes the phosphorus concentration profile to improve semiconductor layer performance while minimizing unnecessary process complexity.
2Reliability
If phosphorus atoms are introduced to terminate dangling bonds and improve reliability, then device functionality is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs precise control of phosphorus implantation parameters including energy, dose, and annealing temperature to achieve the desired phosphorus concentration profile. This optimization ensures effective dangling bond termination and hydrogen desorption while maintaining manufacturability through well-established semiconductor processing techniques.
3Reliability
If multiple impurity atoms are managed to optimize semiconductor device performance, then device reliability is improved, but the difficulty of detecting and measuring impurity concentrations increases
Solution Approach 1:
Phosphorus atoms serve as an intermediary element to indirectly manage hydrogen concentration in semiconductor layers. By introducing phosphorus through ion implantation and annealing, the patent achieves hydrogen desorption and dangling bond termination without requiring direct measurement and control of hydrogen concentration, thus simplifying the detection and measurement requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively optimizes the performance of semiconductor devices by promoting desorption of hydrogen atoms while improving the reliability of memory cells and transistors, addressing issues related to hydrogen's presence and its impact on device functionality.
Implementation Method 1
The introduction of phosphorus atoms through ion implantation
Implementation Method 2
subsequent annealing to desorb hydrogen atoms
Implementation Method 3
subsequent annealing to desorb hydrogen atoms
Implementation Method 4
creating a concentration gradient that enhances the performance of semiconductor layers
Implementation Method 5
improves reliability by terminating dangling bonds
Data Source
AI summary
In one embodiment, a semiconductor device includes a stacked film including a plurality of electrode layers and a plurality of insulating layers alternately stacked in a first direction. The device further includes a columnar portion including a charge storage layer and a first semiconductor layer extending through the stacked film in the first direction, the first semiconductor layer including an impurity element. The device further includes a second semiconductor layer or a first insulator provided on the stacked film and the columnar portion, the second semiconductor layer or the first insulator including the impurity element and having a concentration gradient of the impurity element in the first direction.