3D Memory Stack Insulation Structure to Prevent Layer Bending
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Solution Overview
Problem
During the manufacturing of semiconductor memory devices, particularly three-dimensional nonvolatile memories, the removal of sacrificial layers can cause bending or distortion of remaining insulating layers, leading to structural issues.
Innovation Solution
A semiconductor memory device design featuring a stacked body with conductive layers separated by insulating layers, where the insulating layers include Si—O bonds more than Si—C bonds, and are structured to cover the upper and lower surfaces of a first layer with a higher carbon content, enhancing structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If sacrificial layers are removed to form conductive layers in gaps, then the manufacturing process can proceed, but the remaining insulating layers become bent or distorted
Solution Approach 1:
The insulating layer is segmented into multiple thin insulating sub-layers instead of a single thick layer. This segmentation reduces the overall flexibility and bending tendency of the insulating structure, as each thin sub-layer contributes less to the cumulative bending moment while maintaining the necessary insulation function between conductive layers.
Solution Approach 2:
The patent employs a composite structure where insulating sub-layers are combined with sacrificial layers in an alternating stacked configuration. This composite arrangement allows the insulating sub-layers to maintain structural integrity while the sacrificial layers provide the necessary space for conductive layer formation, creating a balanced structure that resists distortion.
2Manufacturing precision
If insulating layers are made thinner to reduce distortion, then structural integrity improves, but insulation performance may deteriorate
Solution Approach 1:
The insulation function is segmented across multiple thin insulating sub-layers rather than relying on a single thick layer. The cumulative insulation effect of multiple thin layers achieves the required electrical isolation while each individual thin layer maintains flatness and structural integrity, preventing bending and distortion.
Data Source
AI summary
A semiconductor memory device of an embodiment includes: a first stacked body in which a plurality of conductive layers is stacked apart from each other in a stacking direction; a plate-shaped portion that extends in the first stacked body in the stacking direction and in a first direction intersecting the stacking direction, the plate-shaped portion dividing the first stacked body in a second direction intersecting the stacking direction and the first direction; and a pillar that extends in the first stacked body in the stacking direction and in which a memory cell is formed at each of intersection portions with at least some of the plurality of conductive layers, wherein between each the plurality of conductive layers, a first layer and a first insulating layer are disposed, the first layer including at least one of a Si—C bond or a Si—Si bond, the first insulating layer including a Si—O bond, the first insulating layer covering upper and lower surfaces of the first layer in the stacking direction and an end surface of the first layer facing a side wall of the plate-shaped portion LI, the first layer includes Si—C bonds or Si—Si bonds more than the first insulating layer, and the first insulating layer includes Si—O bonds more than the first layer.