3D Memory Stack Contact Structure With Oxide Support Columns
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Solution Overview
Problem
The integration density of two-dimensional non-volatile memory devices is difficult to increase, leading to the development of three-dimensional non-volatile memory devices with stacked memory cells, which require complex structures and manufacturing methods to improve operational reliability.
Innovation Solution
A semiconductor device with a stack structure of interlayer insulating layers and gate conductive layers, featuring support structures, barrier layers, and contact plugs that penetrate the stack structure vertically, with the support structures formed of an oxide layer to prevent oxidation and expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional non-volatile memory devices are used to increase integration density, then integration density is improved, but device complexity increases
Solution Approach 1:
The device is divided into distinct functional regions: a cell region containing memory cells with alternating interlayer insulating layers and gate conductive layers, and a contact region containing support structures and contact plugs. This segmentation allows the memory function and contact function to be independently optimized, reducing overall device complexity while maintaining high integration density.
Solution Approach 2:
The patent transitions from two-dimensional planar memory cells to three-dimensional vertically-stacked memory cells. Multiple interlayer insulating layers and gate conductive layers are stacked in the vertical direction, enabling significantly higher integration density without increasing the planar footprint, thus resolving the contradiction between integration density and device complexity.
2Reliability
If support structures are added to the contact region to stabilize the stack structure, then reliability is improved, but device complexity increases
Solution Approach 1:
Support structures formed from oxide layers are introduced as intermediary elements in the contact region. These support structures provide mechanical stabilization to the stacked stack structure without interfering with the memory cell operation in the cell region. The oxide material acts as an intermediary that provides structural support while maintaining electrical isolation, thus improving reliability without significantly increasing device complexity.
3Reliability
If barrier layers are formed on sidewalls of support structures to prevent oxidation, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
Barrier layers are formed on the sidewalls of support structures before the final stacking and contact formation processes. This preliminary formation of protective barrier layers prevents oxidation of the support structures during subsequent manufacturing steps and operation. By performing the barrier layer formation early in the process sequence, the need for additional protective measures later is eliminated, actually simplifying the overall manufacturing process.
4Reliability
If contact plugs are formed to penetrate the stack structure for electrical connection, then operational reliability is improved, but device complexity increases
Solution Approach 1:
Contact plugs are extracted as separate, distinct elements that penetrate through the stacked structure in the contact region to establish electrical connections between the stacked memory cells and external circuitry. By taking out the contact function as separate vertical conductive paths rather than integrating it into the planar structure, the patent simplifies the overall device architecture while ensuring reliable electrical connections for the three-dimensional memory cells.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves a stable structure and improved characteristics with a simplified manufacturing process, reducing costs and enhancing integration density.
Implementation Method 1
at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region... the at least one support structure may be formed of an oxide layer
Data Source
AI summary
There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.