3D Memory Stack Slit Insulation for Dense, Stable Plug Isolation
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Solution Overview
Problem
The existing three-dimensional nonvolatile memory devices face limitations in integration and operational reliability due to the complexity and cost of their manufacturing methods, which hinder further improvements in density and performance.
Innovation Solution
A semiconductor device structure featuring a first and second stack structure separated by a slit insulating layer, a conductive plug with a protrusion inside the slit, and an insulating spacer, along with a manufacturing method that includes forming a conductive plug and insulating spacer, and a slit insulating layer to enhance separation and stability, reducing manufacturing complexity and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional nonvolatile memory devices are manufactured using existing methods, then memory cells can be stacked vertically over a semiconductor substrate to improve integration density, but the manufacturing complexity and cost increase significantly
Solution Approach 1:
The memory device is divided into multiple stack structures (first stack structure, second stack structure, etc.) that are separated by slit insulating layers. Each stack structure contains alternating interlayer insulating layers and gate electrodes with channel layers penetrating through them. This segmentation allows for modular manufacturing and reduces the overall complexity of the manufacturing process while maintaining high integration density.
Solution Approach 2:
Slit insulating layers are introduced as intermediary elements between adjacent stack structures. These slit insulating layers provide electrical isolation and structural separation, enabling the manufacturing process to be simplified by treating each stack structure as an independent unit that can be manufactured and then combined with intermediaries.
2Reliability
If three-dimensional nonvolatile memory devices are manufactured using existing methods, then memory cells are formed along channel layers to improve performance, but the manufacturing cost increases
Solution Approach 1:
By segmenting the device into multiple independent stack structures separated by slit insulating layers, the manufacturing process can be optimized for each individual stack. This segmentation enables standardization of manufacturing steps, reducing overall manufacturing cost while maintaining the three-dimensional architecture necessary for high operational reliability.
Solution Approach 2:
The invention changes the structural parameters by introducing slit insulating layers with specific configurations (extending in first direction, with conductive plugs having protrusion parts). These parameter changes optimize the balance between operational reliability and manufacturing cost by creating a structure that maintains performance while simplifying the manufacturing process.
3Quantity of substance
If stack structures are closely arranged to improve integration density, then manufacturing precision requirements increase
Solution Approach 1:
Slit insulating layers serve as intermediary structures between closely arranged stack structures. These intermediaries provide clear boundaries and isolation, reducing the precision requirements for direct alignment between adjacent stacks. The conductive plugs with protrusion parts extending into the slit insulating layers further define precise connection points, making the manufacturing process more tolerant of variations while maintaining high integration density.
4Reliability
If existing manufacturing methods are used to create three-dimensional memory structures, then memory cells can be formed with proper separation, but the process becomes less economical
Solution Approach 1:
The memory device is segmented into multiple stack structures that can be manufactured using standardized processes. Each stack structure maintains proper separation through slit insulating layers, ensuring structural stability. The modular nature of this segmentation allows for economies of scale in manufacturing, reducing costs while maintaining reliability.
Solution Approach 2:
The invention optimizes structural parameters such as the configuration of slit insulating layers and conductive plugs to achieve a balance between structural stability and manufacturing economy. By carefully designing the protrusion parts of conductive plugs and the extension direction of slit insulating layers, the structure achieves proper separation and stability while simplifying the manufacturing process for better economic efficiency.
Data Source
AI summary
A semiconductor device includes: a first stack structure; a second stack structure; a slit insulating layer located between the first stack structure and the second stack structure, the slit insulating layer extending in a first direction; a conductive plug located between the first stack structure and the second stack structure, the conductive plug including a first protrusion part protruding to the inside of the slit insulating layer; and an insulating spacer surrounding a sidewall of the conductive plug.