Memory Stack Slot Layout for Dense Routing Access

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional vertical memory arrays face challenges in increasing memory density without increasing the lateral footprint, leading to complex and congested routing paths for electrical connections, which hinders the integration of additional components in memory devices.

Innovation Solution

A microelectronic device structure with a stack of vertically alternating conductive and insulative structures, including staircase structures with steps for electrical access, support pillar structures, and additional slot structures that reduce the width of block structures while maintaining sufficient area for conductive routing, facilitating increased memory density and reduced congestion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If additional tiers of conductive structures are formed to increase memory density, then memory capacity increases, but routing paths become complex and congested

Engineering Contradiction:
Improvememory densityVSAvoidrouting complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent divides the memory array into multiple independent blocks, each with its own staircase structure and routing paths. This segmentation allows routing to be distributed across multiple independent paths rather than all routing competing for the same space, thereby reducing congestion and complexity while maintaining high memory density through additional tiers.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If lateral footprint is reduced to increase density, then area efficiency improves, but routing paths become more congested

Engineering Contradiction:
Improvelateral footprintVSAvoidrouting congestion
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent utilizes vertical stacking to add memory capacity in the vertical dimension rather than expanding laterally. By forming multiple tiers of conductive structures stacked vertically, the design achieves high memory density while maintaining a compact lateral footprint. The block structure with distributed staircases further enables efficient routing within the constrained lateral space.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of operation

If more staircase structures are added to access additional tiers, then electrical access improves, but structural complexity increases

Engineering Contradiction:
Improveelectrical accessVSAvoidstructural complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent implements multiple independent staircase structures, each serving specific tiers within defined blocks. This segmentation of the electrical access structure allows each staircase to be optimized for its specific function while reducing the overall complexity compared to a single monolithic staircase structure that would need to access all tiers.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12178041B2Microelectronic devices including slot structures and additional slot structures
Publication Date: 2024.12.24 MICRON TECHNOLOGY INC
  • US12178041B2 patent drawing
  • US12178041B2 patent drawing
  • US12178041B2 patent drawing

AI summary

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, a staircase structure within the stack structure having steps comprising horizontal edges of the tiers, conductive contact structures in contact with the steps of the staircase structure, support pillar structures extending through the stack structure, and additional slot structures extending partially through the stack structure within one of the block structures, one of the additional slot structures extending between horizontally neighboring support pillar structures and closer to one of the horizontally neighboring support pillar structures than to an additional one of the horizontally neighboring support pillar structures. Related microelectronic devices, memory devices, and electronic systems are also described.