Memory Stack Contact Plug Layout With Stepped Support Pads
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing data storage capacity and maintaining structural and electrical reliability, particularly in forming contact plugs due to high deviation in heights, which complicates the manufacturing process.
Innovation Solution
The semiconductor device incorporates a support structure with stepped steps in the connection region, allowing contact plugs to directly contact pad parts, reducing height deviation and simplifying the formation process, thereby enhancing structural and electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are formed to connect memory stack and pad parts, then electrical connection is achieved, but height deviation increases and manufacturing complexity increases
Solution Approach 1:
The patent introduces an intermediary structure (support with stepped surface) between the memory stack and pad parts. This support structure provides multiple height levels that match the varying heights of word lines, enabling contact plugs to form reliable electrical connections without suffering from height deviation issues. The intermediary support acts as a buffer that accommodates the height differences.
Solution Approach 2:
The support structure is segmented into multiple steps or levels, each corresponding to different height requirements of the word lines. This segmentation allows contact plugs to contact pad parts at appropriate height levels, reducing manufacturing complexity and improving connection reliability by breaking down the single complex connection into multiple manageable contact points.
2Ease of manufacture
If contact plugs directly contact pad parts, then manufacturing process is simplified, but structural reliability decreases due to height deviation
Solution Approach 1:
The support structure serves as a mediator that enables direct contact between contact plugs and pad parts while maintaining structural reliability. The stepped surface of the support provides stable contact points at appropriate heights, allowing simplified manufacturing processes without compromising the structural integrity and reliability of the electrical connections.
3Reliability
If word lines are extended into connection region, then electrical connection is enabled, but structural stability decreases due to height variation
Solution Approach 1:
The support structure acts as an intermediary that stabilizes the word lines extending into the connection region. The stepped surface provides stable contact points that accommodate the height variations of extended word lines, maintaining both electrical connection reliability and structural stability simultaneously.
Solution Approach 2:
The support structure provides different local heights (stepped surface) in different regions to match the local height requirements of extended word lines. This local quality variation enables stable electrical connections at each specific location while maintaining overall structural stability.
Data Source
AI summary
A semiconductor device includes a substrate including a memory cell region and a connection region. A memory stack includes a plurality of word lines extending in the memory cell region and the connection region in a horizontal direction that is parallel with an upper surface of the substrate. The plurality of word lines overlaps with each other in a vertical direction. A support is in the connection region and positioned at a side of the memory stack. The support includes a plurality of steps. A plurality of pad parts is on a top surface of the support. A plurality of contact plugs passes through at least some of the plurality of word lines in the vertical direction. The plurality of contact plugs directly contacts the plurality of pad parts for electrical connection therewith.