3D Memory Stack Insulating Structure for Stress Distribution
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Solution Overview
Problem
The integration degree of semiconductor devices with memory cells formed as a single layer on a substrate has reached its limit, necessitating the development of 3D stacked semiconductor devices to enhance operation reliability, which requires innovative structural and manufacturing methods to improve stability and reliability.
Innovation Solution
A semiconductor device with a stack structure including plane edge regions and a contact region, featuring insulating structures with curved and stair-shaped portions to distribute stress and enhance stability, and a method for manufacturing such devices involving trench formation and insulating structure creation with specific shapes to support memory cell stacking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are stacked on a substrate to improve integration degree, then integration degree is improved, but operation reliability deteriorates due to stress concentration
Solution Approach 1:
The insulating structure incorporates curved edges at the corners of the stack instead of sharp angles. This curvature design distributes stress more evenly throughout the insulating structure, preventing stress concentration at corner regions. The curved geometry allows stress to be dispersed along the curved surface rather than concentrated at sharp points, thereby improving operation reliability while maintaining the 3D stacked memory cell configuration for high integration degree.
Solution Approach 2:
The insulating structure is divided into multiple portions (first insulating portion, second insulating portion, third insulating portion) with different geometries optimized for different regions. The first and second portions have curved edges for stress distribution, while the third portion has a stair structure for precise alignment. This segmentation allows each portion to address specific reliability concerns in its region while collectively maintaining high integration through the overall 3D stack architecture.
2Productivity
If a 3D stack structure is implemented to improve integration degree, then integration degree is improved, but structural stability deteriorates due to stress distribution issues
Solution Approach 1:
Curved edges are formed at the corners of the insulating structure in the 3D stack. This curvature eliminates sharp angles that would act as stress concentration points, thereby distributing mechanical stress more uniformly across the structure. The curved geometry enhances structural stability by preventing stress localization that could lead to cracking or structural failure, while maintaining the vertical stacking architecture for high integration.
Solution Approach 2:
Different regions of the insulating structure are given different geometric qualities: curved edges at corners for stress distribution, and stair structures in specific portions for alignment precision. This local differentiation optimizes each region's contribution to overall structural stability while maintaining the 3D stacked configuration for high integration degree.
3Ease of manufacture
If insulating structures with sharp edges are used in stack, then manufacturing is simpler, but stress concentration occurs reducing reliability
Solution Approach 1:
The insulating structure features curved edges at its corners, replacing sharp angles. This curvature can be achieved through standard photolithography and etching processes by adjusting process parameters, maintaining manufacturing feasibility while dramatically improving reliability by distributing stress away from concentration points. The curved geometry is formed using conventional semiconductor manufacturing techniques with modified process conditions.
Solution Approach 2:
The geometric parameters of the insulating structure are modified by introducing curvature radius at the edges. This parameter change from sharp angles (zero radius) to curved edges (finite radius) fundamentally alters stress distribution while remaining compatible with existing manufacturing processes. The curvature radius can be controlled through process parameters to achieve the desired stress distribution without requiring entirely new manufacturing equipment or methods.
Data Source
AI summary
A semiconductor device includes: a stack including a first plane edge region, a second plane edge region, and a contact region located between the first plane edge region and the second plane edge region; and a first insulating structure including a first portion located in the first plane edge region of the stack, a second portion located in the second plane edge region of the stack, and a third portion located in the contact region of the stack, wherein the first portion includes a first curved edge.