Memory Stack TSV Region Segmentation for Access Efficiency
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Solution Overview
Problem
Existing semiconductor modules with Through-Silicon Vias (TSVs) lack differentiation between frequently accessed and less frequently accessed data, resulting in inefficient memory stack performance.
Innovation Solution
A semiconductor module design with a memory stack configuration that includes central and non-central TSVs, where frequently accessed data is stored in inner banks with shorter electrical paths and less frequently accessed data is stored in outer banks with longer paths, optimizing data access efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If TSVs are arranged in a common region without differentiation, then the structure is simple and easy to manufacture, but the memory stack efficiency is low due to inability to differentiate frequently accessed and not frequently accessed data
Solution Approach 1:
The patent segments the memory stack into multiple regions (first region, second region, third region) with different TSV arrangements. The first region has TSVs closer to the processing device for frequently accessed data, while the second and third regions have TSVs at different distances for less frequently accessed data. This segmentation allows differentiated access paths without requiring complete redesign of the entire memory structure.
Solution Approach 2:
The patent applies local quality by creating regions with different TSV characteristics tailored to specific access patterns. The first region is optimized for fast access with shorter electrical paths, while the second and third regions are optimized for other purposes with longer paths. Each region has locally optimized TSV density and positioning to match the access requirements of the data it serves.
2Speed
If data is stored in memory banks with longer electrical paths, then more data can be accommodated, but power consumption increases and access speed decreases for frequently accessed data
Solution Approach 1:
The patent segments memory data into frequently accessed data stored in the first region with short electrical paths and less frequently accessed data stored in the second and third regions with longer paths. This segmentation ensures that hot data benefits from fast access and low power consumption, while cold data is stored in regions that can accommodate more capacity without impacting overall performance.
Solution Approach 2:
The patent creates locally optimized storage regions where the first region has TSVs positioned for minimum electrical path length to the processing device, reducing both access time and power consumption for frequently accessed data. The second and third regions have TSVs positioned differently to maximize capacity while accepting longer paths for less critical data.
3Productivity
If all data is stored in memory banks with short electrical paths, then access speed is improved, but the memory stack capacity and performance for diverse access patterns deteriorate
Solution Approach 1:
The patent divides the memory stack into multiple functional regions with different TSV arrangements. The first region uses a high-density TSV pattern optimized for speed, while the second and third regions use different patterns optimized for capacity and diverse access patterns. This segmentation allows the system to achieve high overall performance by serving different data types in their optimal regions.
Solution Approach 2:
The patent creates a multi-functional memory stack where different regions serve different purposes: the first region handles frequently accessed data requiring fast access, while the second and third regions handle less frequently accessed data requiring larger capacity. This universal design allows the memory stack to efficiently handle various access patterns simultaneously, improving overall system performance.
Data Source
AI summary
A semiconductor module includes a module board, an interposer on the module board, and a processing device and a memory stack that are disposed side by side on the interposer, wherein the memory stack includes a base die, and a memory die on the base die, wherein the memory die includes an outer bank region, a central TSV region, first and second inner bank regions, and a first non-central TSV region, wherein the central TSV region is disposed between the outer bank region and the second inner bank region, and the first non-central TSV region is disposed between the first inner bank region and the second inner bank region.