Memory Staircase Support Structures to Prevent Collapse

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Solution Overview

Problem

Conventional techniques for fabricating memory devices face challenges with structural collapse during the manufacturing process, particularly at staircase regions, due to the small dimensions of components, which can lead to increased costs with additional chemical process steps.

Innovation Solution

The implementation of support structures with specific dimensions and dimension relationships at the staircase regions of memory devices, along with the use of a reticle configured for lithography systems to pattern these support structures, prevents potential collapse during the fabrication process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If additional chemical process steps are used to prevent structural collapse, then structural stability is improved, but manufacturing cost increases

Engineering Contradiction:
Improvestructural stabilityVSAvoidmanufacturing cost
Core Design Contradiction:
Stability of the object's compositionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by forming support structures at staircase regions before the collapse-prone fabrication steps. These support structures are created in advance to prevent structural collapse during subsequent processing, eliminating the need for additional chemical process steps and reducing manufacturing costs while maintaining structural stability

Inventive Principle:
Principle #10Preliminary action

2Productivity

If component dimensions are reduced to increase device density, then device integration is improved, but structural stability deteriorates

Engineering Contradiction:
Improvedevice integrationVSAvoidstructural stability
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The patent applies local quality by providing structural support specifically at staircase regions where collapse is most likely to occur, rather than uniformly supporting the entire structure. This localized approach maintains structural stability at reduced dimensions while minimizing additional material and preserving device integration benefits

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If conventional fabrication processes are used without support structures, then manufacturing simplicity is maintained, but structural collapse occurs

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidstructural integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces support structures as intermediary elements that mediate between the fabrication process and the vulnerable staircase regions. These support structures act as temporary scaffolding during fabrication, preventing collapse while allowing conventional processes to proceed, and are later removed to leave the final device structure

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250132267A1Memory device including support structures
Publication Date: 2025.04.24 MICRON TECHNOLOGY INC
  • US20250132267A1 patent drawing
  • US20250132267A1 patent drawing
  • US20250132267A1 patent drawing

AI summary

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers of respective memory cells and control gates, the tier located one over another over a substrate, the control gates including a control gate closest to the substrate, the control gates including respective portions forming a staircase structure; conductive contacts contacting the control gates at a location of the staircase structure, the conductive contacts including a conductive contact contacting the control gate; a dielectric structure located on sidewalls of the control gates; and support structures adjacent the conductive contacts and having lengths extending vertically from the substrate, the support structures including a support structure closest to the conductive contact, the support structure located at a distance from an edge of the dielectric structure, wherein a ratio of a width of the support structure over the distance is ranging from 1.6 to 2.0.