Memory State Distribution via Modified Randomization
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Solution Overview
Problem
Solid-state storage devices face increased susceptibility to read and write disturbances due to the proximity of memory devices, leading to data retention errors and reduced lifespan, with up to 25% of data values being affected.
Innovation Solution
A modified randomization process is implemented to alter the distribution of memory device states, minimizing the selection of states prone to negative effects by varying the probabilities for selecting '1' or '0' in memory pages, using a modified randomization seed to generate a distribution pattern that reduces exposure to disturbances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory devices are positioned closer together to increase storage density, then storage capacity is improved, but susceptibility to read and write disturbances increases
Solution Approach 1:
The patent applies local quality by assigning different probability weights to different memory states based on their susceptibility to disturbances. Memory states are grouped into categories (first group with higher susceptibility, second group with lower susceptibility) and different probability values are applied locally to each group, rather than using a uniform distribution across all states.
Solution Approach 2:
The patent changes the parameter of state distribution from uniform to non-uniform by modifying the probability values assigned to different memory states. The modified randomization process uses adjusted probability parameters that favor less susceptible states, thereby changing the statistical characteristics of state selection to mitigate disturbance effects.
2Measurement precision
If more discrete subranges of electrical charge are created to increase the number of storable values, then storage precision is improved, but susceptibility to disturbances increases
Solution Approach 1:
The patent applies local quality by treating different charge subranges (memory states) differently through localized probability adjustments. Each state or group of states receives a tailored probability value based on its specific susceptibility characteristics, allowing precise control over the distribution of charged states while maintaining high storage precision.
Solution Approach 2:
The patent modifies the probability parameters associated with selecting specific charge subranges during the randomization process. By changing these parameters to favor less susceptible states, the system maintains high storage precision through multiple discrete subranges while reducing overall susceptibility to disturbances.
3Stability of the object's composition
If a uniform randomization process is used to distribute memory states, then data distribution is improved, but exposure to negative effects increases
Solution Approach 1:
The patent introduces asymmetry by replacing the symmetric uniform distribution with a non-uniform probability distribution. Different memory states are assigned different probability weights based on their susceptibility characteristics, creating an asymmetric distribution that systematically reduces exposure to negative effects while maintaining adequate data distribution across the storage medium.
Solution Approach 2:
The patent changes the distribution parameters from uniform probability to non-uniform probability by modifying the randomization process. The modified parameters create a skewed distribution that favors less susceptible states, thereby reducing overall exposure to negative effects while preserving the randomness and distribution properties needed for stable data storage.
Data Source
AI summary
Storage devices include a memory array comprised of a plurality of memory devices. These memory devices are programmed with a modified distribution across the available memory states within the devices. The modified distribution of memory states attempts to minimize the use of memory states that are susceptible to negative effects. These negative effects can include read and write disturbs as well as data retention errors. Often, these negative effects occur on memory states on the lower and upper states within the voltage threshold range of the memory device. The distribution of memory states can be modified though the use of a modified randomization seed configured to change the probabilities of programming of each page within the memory device. This modification of the randomization seed can yield desired distribution of memory device states that are configured to reduce exposure to negative effects thus prolonging the overall lifespan of the storage device.