Memory Device Programming Step Value Adjustment
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Solution Overview
Problem
In non-volatile memory devices, especially in three-dimensional stacked memory cell structures, it is challenging to achieve high-efficiency programming operations due to factors like threshold voltage distribution, electrical characteristics, and process parameter drift, which affect the incremental step pulse programming scheme.
Innovation Solution
The proposed solution involves a programming method and memory device that dynamically adjust the programming voltage pulse by adjusting the step value based on the pass bit number difference value calculated from program verify operations, thereby optimizing the programming operation without requiring complex logical operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a fixed step value is used in the incremental step pulse programming scheme, then the programming operation is simple to implement, but the programming efficiency is low and cannot adapt to threshold voltage distribution variations
Solution Approach 1:
The patent applies the dynamics principle by making the step value adjustable rather than fixed. The controller dynamically changes the step value between programming operations based on pass bit number differences, allowing the programming scheme to adapt to varying threshold voltage distributions while maintaining operational simplicity through automated adjustment.
Solution Approach 2:
The patent implements feedback by using pass bit number differences from program verify operations to adjust the step value for subsequent programming operations. This closed-loop approach allows the system to respond to actual programming results and optimize performance automatically without requiring complex external control.
2Productivity
If the step value is adjusted dynamically based on pass bit number difference, then the programming efficiency is improved, but the calculation and control complexity increases
Solution Approach 1:
The patent applies self-service by enabling the programming system to automatically adjust its own parameters. The controller autonomously calculates pass bit number differences and modifies the step value without external intervention, reducing the need for complex external control logic while improving programming efficiency through adaptive step adjustment.
3Reliability
If complex logical operations are applied to adjust the programming voltage pulse, then the programming performance can be optimized, but the device complexity and operational overhead increase
Solution Approach 1:
The patent applies parameter changes by modifying the step value parameter based on pass bit number differences. This approach optimizes programming reliability through adaptive parameter adjustment while avoiding complex logical operations, as the step value modification is a straightforward parameter change rather than a complex computational process.
Data Source
AI summary
A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.