3D Memory Electrode Layout With Stepwise Pads for Reliable Contacts
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Solution Overview
Problem
The integration of two-dimensional semiconductor devices is limited by the expensive equipment required for fine pattern formation, making it difficult to increase their density and efficiency, while three-dimensional devices offer a potential solution but require innovative structural designs to enhance reliability and integration.
Innovation Solution
A semiconductor device with a substrate featuring a cell array and connection region, including vertically stacked electrodes with stepwise pad sections, contact plugs, and vertically penetrating structures, allowing for increased integration and reliability by optimizing electrode and dielectric layer arrangements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two-dimensional semiconductor devices are used to achieve fine pattern formation, then manufacturing precision can be improved, but device complexity and manufacturing cost increase due to expensive processing equipment
Solution Approach 1:
The patent transitions from two-dimensional planar memory cells to three-dimensional vertically stacked memory cells. Multiple memory cell strings are stacked along the vertical direction (third direction) above the substrate, allowing increased integration density without requiring finer two-dimensional patterns. This dimensional change enables higher capacity while avoiding the need for extremely expensive fine-patterning equipment.
2Quantity of substance
If three-dimensional vertically stacked electrodes are implemented, then integration density can be improved, but manufacturing precision requirements increase due to complex electrode and contact plug formation
Solution Approach 1:
The electrode structure is segmented into multiple distinct layers including first electrodes, second electrodes, and third electrodes, each serving specific functions. Contact plugs are also segmented into first contact plugs connecting to first electrodes and second contact plugs connecting to second electrodes. This segmentation allows each component to be formed and aligned independently, reducing the overall manufacturing precision requirements compared to forming all components in a single complex process.
Solution Approach 2:
Different regions of the device have different structural characteristics. The memory cell region features vertically stacked electrodes with specific spacing, while the connection region has pad sections arranged stepwise at different heights. This local differentiation allows optimization of each region for its specific function, making the overall manufacturing process more manageable.
3Ease of operation
If stepwise pad sections are arranged on the connection region, then ease of operation for electrical connection can be improved, but device complexity increases due to additional structural elements
Solution Approach 1:
Pad sections are arranged in the vertical dimension rather than only in the horizontal plane. First pad sections, second pad sections, and third pad sections are positioned at different heights corresponding to different electrode levels. This vertical arrangement provides multiple accessible connection points for external electrical connections, improving ease of operation while the pad sections are integrated into the existing electrode structure rather than being separate components.
Data Source
AI summary
Disclosed is a semiconductor device comprising a substrate including a cell array region and a connection region, an electrode structure extending in a first direction on the substrate and including vertically stacked electrodes having pad sections arranged stepwise on the connection region, a first contact plug connected to a first one of the pad sections, a pair of first vertical structures that penetrate the first one of the pad sections and are spaced apart from each other in a first direction by a first distance, a second contact plug connected to a second one of the pad section and having a vertical length that is greater than that of the first contact plug, and a pair of second vertical structures that penetrate the second one of the pad sections and are spaced apart from each other in the first direction by a second distance that is greater than the first distance.