3D Memory Array Strings With Molybdenum Lines for Direct Coupling
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Solution Overview
Problem
Current memory array technologies face challenges in efficiently forming memory arrays with strings of memory cells, particularly in achieving direct electrical coupling and anchoring effects without alternative processing structures, while maintaining electrical isolation between memory blocks.
Innovation Solution
The method involves forming channel openings through insulative and conductive tiers, using conductive and semiconductive materials in void-spaces to create conductive molybdenum-containing metal lines, which are directly electrically coupled with channel material strings, and employing a charge-blocking region to manage charge migration between control-gate and storage materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional memory array formation methods are used, then manufacturing process simplicity is maintained, but direct electrical coupling between channel material and conductor tiers cannot be achieved without alternative processing
Solution Approach 1:
The method forms conductor tiers with void-spaces beforehand, before depositing channel material. This preliminary preparation allows the channel material to be directly deposited into the void-spaces, achieving direct electrical coupling without requiring subsequent alternative processing steps to create the coupling.
Solution Approach 2:
The void-spaces within the conductor tiers act as intermediaries that facilitate direct electrical coupling between the channel material and the conductor tiers. The void-spaces are specifically designed to receive and electrically connect the channel material, eliminating the need for additional coupling structures or processing.
2Area of stationary object
If memory blocks are positioned close together to increase density, then area utilization is improved, but lateral electrical isolation between memory blocks becomes insufficient
Solution Approach 1:
The conductive or semiconductive material positioned between adjacent memory blocks acts as an intermediary that provides lateral electrical isolation. This material fills the spaces between memory blocks and prevents electrical interference, enabling close positioning of memory blocks while maintaining adequate isolation.
Solution Approach 2:
The method applies different material properties locally: conductive/semiconductive material is placed specifically in regions between memory blocks where isolation is needed, while the memory blocks themselves maintain their functional properties. This localized application of different material qualities achieves both high density and adequate isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the range between program and erase voltages, improves electrical isolation, and ensures direct electrical coupling, thereby optimizing the performance and reliability of memory arrays.
Implementation Method 1
conductive molybdenum-containing metal material formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom, wherein the conductive line is directly electrically coupled with the channel material string
Implementation Method 2
employing a charge-blocking region to manage charge migration between control-gate and storage materials
Data Source
AI summary
A method used in forming a memory array comprising strings of memory cells comprises forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a void-space extending laterally-across individual of the memory-block regions. At least one of conductive or semiconductive material is formed in the void-space laterally-outward of individual of the channel-material strings. Conductive molybdenum-containing metal material is formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom. The at least one of the conductive or the semiconductive material is of different composition from that of the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.