Memory Substrate Bias Voltage Adjustment for Temperature Compensation
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Solution Overview
Problem
The actual data writing time in memory is affected by temperature, leading to incomplete data storage due to longer writing times than reserved, affecting system performance.
Innovation Solution
A method and system that adjust the substrate bias voltage of a sense amplification transistor in a memory based on the current temperature and a mapping relationship, ensuring the actual data writing time is within a preset writing time by compensating for temperature-induced delays.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sufficient data writing time is reserved to ensure accuracy, then data writing accuracy is improved, but the actual data writing time becomes longer than reserved due to temperature effects, causing incomplete data storage
Solution Approach 1:
The patent changes the substrate bias voltage parameter of the sense amplification transistor to compensate for temperature-induced timing deviations. By adjusting this voltage parameter, the circuit speed is modified to ensure data writing completes within the reserved time window, resolving the contradiction between maintaining accuracy and avoiding time overflow.
Solution Approach 2:
The patent implements a feedback mechanism where the actual data writing time is monitored and compared against the reserved time. Based on this feedback, the substrate bias voltage is dynamically adjusted to correct timing deviations caused by temperature variations, ensuring the writing process completes accurately within the allocated time.
2Speed
If the transistor turns on and capacitor charges instantly, then data writing speed is improved, but in reality temperature affects the charging time, causing it to exceed the reserved writing cycle
Solution Approach 1:
The patent adjusts the substrate bias voltage parameter to compensate for temperature-induced delays in the transistor charging process. This parameter change allows the system to maintain high writing speeds while ensuring the actual charging time remains within the reserved writing cycle, even under varying temperature conditions.
3Reliability
If a mapping relationship between temperature, substrate bias voltage, and actual data writing time is established, then temperature-induced timing issues are resolved, but the system complexity increases due to additional measurement and adjustment mechanisms
Solution Approach 1:
The patent employs a self-service approach where the system automatically measures its own temperature, determines the appropriate substrate bias voltage adjustment based on pre-established mapping relationships, and applies the correction without external intervention. This minimizes the need for complex external control systems while ensuring reliable data writing completion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures complete data writing into the storage capacitor by optimizing the data writing time, enhancing memory performance and efficiency by adjusting the substrate bias voltage according to temperature changes.
Implementation Method 1
The actual data writing time of the memory is affected by temperature
Data Source
AI summary
Embodiments of this application provide a method and system for adjusting a memory, and a semiconductor device. The method for adjusting a memory includes: acquiring a mapping relationship among a temperature of a transistor, a substrate bias voltage of a sense amplification transistor in a sense amplifier, and an actual data writing time of the memory; acquiring a current temperature of the transistor; and adjusting the substrate bias voltage on the basis of the current temperature and the mapping relationship, such that an actual data writing time corresponding to an adjusted substrate bias voltage is within a preset writing time.