Memory Substrate Nesting for Form-Factor Height Limits
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Solution Overview
Problem
Semiconductor storage devices face challenges in compactly mounting memory devices within form factor standards due to height restrictions, where the combined thickness of the memory device and substrates exceeds the allowed height, preventing accommodation in standard casings.
Innovation Solution
The solution involves a semiconductor storage device configuration where a memory device is mounted on a base substrate through a perforated substrate, allowing the memory device to be positioned beyond the standard height restriction by using a separate connector substrate with a hollow portion and electrodes, enabling compact mounting and accommodation within the casing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the memory device is mounted directly on the substrate, then the mounting structure is simple, but the combined thickness exceeds the form factor height restriction
Solution Approach 1:
The patent divides the mounting structure into two separate substrates: a first substrate for mounting the memory device and a second substrate for electrical connection. This segmentation allows the memory device to be positioned beyond the height restriction of the casing while maintaining a compact overall structure through the hollow portion in the second substrate.
Solution Approach 2:
The patent employs a nested configuration where the first substrate with the memory device is positioned within the hollow portion of the second substrate. This nesting approach allows the memory device to extend beyond the standard height while the hollow portion accommodates the excess thickness, effectively solving the height restriction problem.
2Length of stationary object
If the memory device is positioned beyond the standard height restriction, then compact mounting is achieved, but the casing accommodation becomes problematic
Solution Approach 1:
The second substrate acts as an intermediary element between the memory device and the casing. Its hollow portion provides the necessary accommodation space for the memory device that extends beyond standard height restrictions, while the connector portion maintains electrical connection and compatibility with standard form factor casings.
Solution Approach 2:
The patent utilizes the vertical dimension by positioning the memory device beyond the standard height restriction and accommodating it in the hollow portion of the second substrate. This dimensional approach allows the structure to fit within standard form factor specifications while accommodating taller memory devices.
3Length of stationary object
If a separate connector substrate with hollow portion is used, then height restriction is resolved, but the device complexity increases
Solution Approach 1:
The second substrate serves multiple functions: it provides the hollow portion for accommodating the memory device, contains the connector portion for electrical connection, and acts as a structural support element. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in overall device complexity.
Data Source
AI summary
A semiconductor storage device including a memory device, a first substrate, and a second substrate. The memory device includes chips or chip bonded bodies. The first substrate has a first main surface and a second main surface. The memory device is disposed on the first main surface. The second main surface is a main surface on a side opposite to the first main surface. The second substrate has a hollow portion, a third main surface, a fourth main surface, and a connector portion. The memory device is disposed in the hollow portion. The third main surface contacts the first main surface outside the hollow portion. The fourth main surface is a main surface on a side opposite to the third main surface. The connector portion is disposed at an edge portion outside the hollow portion.