Memory Substrate Mask Structure for Arrayed Active Area Etching
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Solution Overview
Problem
The existing methods for preparing substrate structures in memory devices face difficulties in severing strip patterns, which hinders the formation of active areas on the substrate.
Innovation Solution
A method involving the formation of a first mask layer with strip patterns, a dielectric layer with sacrificial portions, and a second mask layer with through-hole patterns, allowing for layer-by-layer etching to transfer patterns to the substrate and form active areas in an array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If strip patterns are formed on the substrate and directly etched, then the process should be simple, but the strip patterns are difficult to be severed making it impossible to form active areas
Solution Approach 1:
The patent divides the mask layer into multiple segments (first mask layer with strip patterns, second mask layer with through-hole patterns) that can be independently formed and controlled. This segmentation allows the strip patterns to be properly severed by the through-hole patterns, resolving the difficulty of severing while maintaining manufacturability
Solution Approach 2:
The patent performs preliminary actions by forming the first mask layer with strip patterns, then forming the second mask layer with through-hole patterns before the final etching step. This preliminary structuring enables proper severing of the strip patterns to define active areas, overcoming the direct etching limitation
2Reliability
If multiple mask layers are formed to enable proper pattern transfer, then the formation of active areas becomes feasible, but the process complexity increases
Solution Approach 1:
The patent introduces an intermediary approach where the second mask layer with through-hole patterns acts as a mediator to sever the first mask layer's strip patterns. This intermediary structure enables proper pattern transfer and active area formation while organizing the complexity into systematic, sequential steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the convenient formation of active areas on the substrate by using the mask layers to etch the substrate, overcoming the challenge of severing strip patterns and improving the substrate structure preparation process.
Implementation Method 1
performing layer-by-layer etching using the first mask layer and the second mask layer as masks to transfer the strip patterns and the through-hole patterns to the substrate
Data Source
AI summary
A substrate structure of the memory, and a method for preparing the substrate structure of the memory are provided. The method includes: providing a substrate; forming a first mask layer on the substrate, the first mask layer including a plurality of strip patterns extending in a direction and spaced apart from each other; forming a first dielectric layer covering the first mask layer; forming a plurality of sacrificial portions spaced apart from each other in the first dielectric layer and covering a portion of the plurality of strip patterns; filling gaps between the sacrificial portions with a second dielectric material; forming a second mask layer by removing the sacrificial portions while retaining the second dielectric material in the gaps; and performing layer-by-layer etching into the substrate to form a plurality of active areas arranged in an array.