Memory Subsystem Cross-Temperature Data Rewriting
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Solution Overview
Problem
Conventional memory sub-systems face reliability issues due to increased error rates caused by cross-temperature effects, which lead to bit flips and data loss, especially in high-density memory cells like QLC, requiring complex error correction operations and reducing performance.
Innovation Solution
The implementation of a cross-temperature handling component that identifies data segments written outside a nominal temperature range and re-writes them when the system returns to that range, reducing bit errors and the need for error correction operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If data is written in high-density memory cells (QLC) to increase storage capacity, then data density is improved, but error rate increases due to cross-temperature effects causing bit flips
Solution Approach 1:
The system performs preliminary detection of cross-temperature conditions and proactively re-programs data before bit flips occur. The controller monitors temperature changes and identifies when data written at one temperature is being read at a significantly different temperature, then preemptively re-programs the data to prevent errors rather than waiting for error detection
Solution Approach 2:
The patent converts the harmful cross-temperature effect into a beneficial operation by using temperature monitoring to trigger selective re-programming. The cross-temperature condition, which normally causes bit flips, is instead used as a detection mechanism to identify data that needs re-programming, turning a reliability problem into a quality control opportunity
2Reliability
If complex error correction operations are implemented to handle cross-temperature bit flips, then reliability is improved, but performance decreases due to additional processing overhead
Solution Approach 1:
The system performs preliminary re-programming of data at appropriate temperatures before read operations occur. By proactively re-programming data when cross-temperature conditions are detected, the system prevents bit flips from occurring in the first place, eliminating the need for complex error correction operations during read operations and thus maintaining high performance
Solution Approach 2:
The patent introduces temperature monitoring and detection mechanisms as an intermediary between data storage and retrieval operations. This intermediary system identifies cross-temperature conditions and triggers selective re-programming, acting as a mediator that prevents errors without requiring complex error correction during actual data operations
3Reliability
If data is re-written at nominal temperature to reduce bit errors, then reliability is improved, but write operations increase and performance decreases
Solution Approach 1:
The system applies local quality by selectively re-programming only the specific data segments that are affected by cross-temperature effects, rather than re-programming all data. The controller identifies individual memory blocks or pages that have temperature mismatches between write and read operations and re-programs only those affected segments, minimizing the overall write overhead while maintaining reliability for critical data
Solution Approach 2:
The patent changes the temperature parameter as a control variable to optimize data reliability. By monitoring temperature conditions and adjusting the re-programming decision based on temperature differential thresholds, the system dynamically determines when re-programming is necessary, balancing reliability improvement against write operation overhead through parameter-based decision making
Data Source
AI summary
An indication of a programming temperature at which data is written at a first location of the memory component is received. If it is indicated that the programming temperature is outside of a temperature range associated with the memory component, the data written to the first location of the memory component is re-written to a second location of the memory component when an operating temperature of the memory component returns within the temperature range.