Memory Stack Support Layout to Prevent Isolation Bridges
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Solution Overview
Problem
As the degree of integration of memory devices increases, the size of support structures decreases, leading to bridges between support structures that should be electrically isolated, resulting in defects and reduced manufacturing yield.
Innovation Solution
Incorporating first and second outer support structures extending in parallel, a central support structure, and protrusion patterns to maintain structural integrity and prevent bowing during manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the size of support structures is decreased to increase integration density, then the degree of integration is improved, but bridges occur between support structures causing defects
Solution Approach 1:
The support structure is divided into multiple segments: first support structures, second support structures, and third support structures positioned at different locations. This segmentation allows each support structure to be independently sized and positioned, preventing bridges while maintaining overall structural support function
Solution Approach 2:
A third support structure is introduced as an intermediary element positioned between the first and second support structures. This intermediary structure acts as a buffer that prevents direct contact between the first and second support structures, eliminating the bridge defect while maintaining structural integrity
2Quantity of substance
If the size of support structures is decreased to increase integration density, then the degree of integration is improved, but manufacturing yield deteriorates
Solution Approach 1:
Dividing the support structure into multiple smaller segments enables better control over their positions and sizes, reducing the likelihood of bridges forming during manufacturing processes, thereby improving yield while maintaining high integration density
Solution Approach 2:
The third support structure serves as a protective intermediary that prevents direct contact between first and second support structures during manufacturing, reducing defect formation and improving overall manufacturing yield
3Area of stationary object
If support structures are positioned closer together to reduce device area, then area is reduced, but contact between support structures occurs causing electrical defects
Solution Approach 1:
The support structure is segmented into first, second, and third support structures positioned at different locations. This segmentation allows for optimized spacing where the third support structure is positioned between the first and second, maintaining electrical isolation while minimizing the overall device area
Solution Approach 2:
The third support structure acts as an intermediary barrier that maintains electrical isolation between the first and second support structures. Even when positioned close together to reduce device area, the intermediary structure prevents direct contact and maintains manufacturing precision
Data Source
AI summary
A memory device includes: a stack structure; first support structures penetrating the stack structure, the first support structures being spaced apart from each other in a first direction; a first protrusion pattern penetrating the stack structure, the first protrusion pattern being spaced apart from one of the first support structures in a second direction; a first outer support structure penetrating the stack structure, the first outer support structure extending along the first direction from the first protrusion pattern; and a central support structure penetrating the stack structure, the central support structure extending in the second direction in a region between the first support structures, the central support structure being in contact with the first outer support structure.