3D Memory Device With Support Pillars For High Density
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Solution Overview
Problem
The semiconductor industry faces challenges in creating memory devices with high element density, small size, and solid structure while maintaining robust manufacturing processes to meet increasing storage demands.
Innovation Solution
A memory device structure comprising a substrate, a bottom source structure, multiple gate layers, dielectric layers, a contact structure, and support pillar structures, where the bottom source structure includes a bottom electrode layer, a dielectric stack structure, and a blocking structure, and the gate and dielectric layers are alternately stacked.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the storage capacity and element density are increased, then the memory capacity is improved, but the device size and structural complexity increase
Solution Approach 1:
The memory device is segmented into multiple distinct functional layers including gate layers, dielectric layers, blocking structures, and support pillar structures. This segmentation allows each component to be optimized independently for its specific function while contributing to the overall high storage capacity, thereby managing structural complexity through modular design
Solution Approach 2:
The patent employs a three-dimensional stacked architecture where gate layers and dielectric layers are alternately stacked vertically over the bottom source structure. This vertical stacking in the third dimension enables high element density and storage capacity without proportionally increasing the planar footprint, effectively decoupling storage capacity from device area
2Quantity of substance
If the element density is increased, then the storage capacity is improved, but the manufacturing precision requirements increase
Solution Approach 1:
Support pillar structures are formed in advance before the final memory structure assembly. These pre-formed pillars serve as structural templates and alignment references that guide subsequent manufacturing steps, ensuring precise positioning of high-density elements while simplifying the overall manufacturing process
Solution Approach 2:
Different regions of the device employ different structural characteristics - the bottom source structure uses a dielectric stack with specific layer compositions, while the upper portions use alternating gate and dielectric layers. This local differentiation allows optimization of manufacturing processes for each region's specific density requirements, managing overall manufacturing precision
3Volume of moving object
If the device size is reduced, then the small size requirement is met, but the structural integrity may be compromised
Solution Approach 1:
The memory structure employs a nested configuration where gate layers and dielectric layers are stacked within a compact volume defined by the bottom source structure and support pillars. This nested arrangement maximizes the use of available space, achieving high element density in a small device volume while maintaining structural integrity through the hierarchical organization of components
Solution Approach 2:
The device uses composite material structures including dielectric stacks with multiple layers of different materials, and alternating gate and dielectric layers. These composite structures provide both mechanical strength for structural integrity and functional properties for memory operation, allowing small device size without compromising strength
Data Source
AI summary
A memory device includes a substrate, a bottom source structure, gate layers, dielectric layers, a contact structure and a plurality of support pillar structures. The bottom source structure is located over the substrate. The bottom source structure includes a bottom electrode layer, a dielectric stack structure and a blocking structure. The gate layers and the dielectric layers are alternately stacked over the bottom source structure. The contact structure penetrates through the gate layers and the dielectric layers and extends to the bottom source structure. The support pillar structure penetrates through the gate layers and the dielectric layers and extends to the bottom source structure.The dielectric stack structure of the bottom source structure surrounds each of the support pillar structures. The blocking structure of the bottom source structure is located between one of the support pillar structures and the contact structure.