Memory System with Switch Array for DRAM-NVDIMM Backup
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Solution Overview
Problem
Conventional computer systems face challenges with memory density and cost due to the use of volatile DRAM, which requires multiple modules for increased storage capacity, leading to larger form factors and higher expenses, and existing solutions like NVDIMMs are expensive and inefficient.
Innovation Solution
A memory system comprising a combination of volatile and non-volatile memory modules with a module controller and switch array for data backup and recovery, allowing for efficient data transfer between modules and reducing the need for multiple DRAM modules.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If DRAM modules are used to increase storage capacity, then memory capacity is improved, but device complexity and cost increase
Solution Approach 1:
The patent combines DRAM (volatile memory) and NVDIMM (non-volatile memory) into a single memory module, allowing both memory types to coexist and be controlled by a single module controller. This merging approach increases storage capacity without proportionally increasing the number of separate modules, as the NVDIMM provides persistent storage while the DRAM provides high-speed buffer storage within the same module structure.
Solution Approach 2:
The memory module is designed with multi-functionality, where the same module can operate in different modes (DRAM-only mode, NVDIMM-only mode, or combined mode) depending on system requirements. The module controller can dynamically switch between accessing DRAM, NVDIMM, or both, providing flexible functionality that reduces the need for separate specialized modules.
2Quantity of substance
If multiple DRAM modules are used to increase storage capacity, then memory capacity is improved, but form factor increases
Solution Approach 1:
By merging DRAM and NVDIMM into a single integrated module, the patent reduces the total volume required compared to using separate modules for each memory type. The NVDIMM component provides high-density non-volatile storage in a compact form, and when integrated with DRAM in the same module, it enables increased capacity without linearly increasing the module count and associated form factor.
3Reliability
If NVDIMM is used as memory solution, then non-volatility is improved, but cost and efficiency deteriorate
Solution Approach 1:
The patent segments the memory system into two functional parts: DRAM for high-speed volatile operations and NVDIMM for persistent non-volatile storage. Each component is optimized for its specific function, with the DRAM handling frequent read/write operations at high speed while the NVDIMM providing reliable persistence. This segmentation allows the system to achieve both non-volatility and high efficiency by using each memory type where it performs best.
Solution Approach 2:
Different parts of the memory system have different qualities optimized for their specific functions. The DRAM portion provides high-speed access quality for frequently accessed data, while the NVDIMM portion provides non-volatile persistence quality for data that must be retained. The module controller manages these different local qualities efficiently, switching between them based on operational requirements.
Data Source
AI summary
A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.