Memory System Dynamic Update Method for Wear and Speed Trade-offs

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Solution Overview

Problem

Next-generation memory devices require high capacity, low power consumption, and must be non-volatile with high integrity like DRAM, non-volatile like flash memory, and fast like SRAM, but existing solutions do not effectively manage data overwrite operations efficiently.

Innovation Solution

A method for operating a memory system that selects between in-place and out-of-place update operations based on analysis of write requests and threshold values, using address mapping information to determine whether to overwrite data in the same region or move it to a different region, optimizing performance and lifespan.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If in-place update operation is used to overwrite data in the same region, then write speed is improved, but memory cell wear increases and lifespan decreases

Engineering Contradiction:
Improvewrite speedVSAvoidmemory lifespan
Core Design Contradiction:
SpeedVSDuration of action of stationary object

Solution Approach 1:

The patent dynamically selects between in-place update and out-of-place update operations based on real-time analysis of write request characteristics (sequential vs. random access patterns, data size, frequency). This dynamic adaptation allows the system to optimize for write speed when using in-place updates for sequential writes, while switching to out-of-place updates for random writes that would cause excessive wear, thus resolving the contradiction between write speed and memory lifespan

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the update operation parameter (in-place vs. out-of-place) based on analyzed conditions of write requests. By monitoring write patterns and adjusting the update strategy accordingly, the system can maintain high write speeds for appropriate workloads while protecting memory cells from excessive wear through selective use of out-of-place updates

Inventive Principle:
Principle #35Parameter changes

2Duration of action of stationary object

If out-of-place update operation is used to write data in a different region, then memory cell wear is reduced and lifespan is extended, but response time increases

Engineering Contradiction:
Improvememory lifespanVSAvoidresponse time
Core Design Contradiction:
Duration of action of stationary objectVSLoss of time

Solution Approach 1:

The system dynamically adjusts the update strategy based on write request analysis. For sequential write patterns where data is written in order, the patent can use out-of-place updates that distribute wear evenly across memory regions while maintaining efficient throughput. For random access patterns, it can switch to in-place updates to minimize response time, thus resolving the contradiction between extending lifespan and maintaining response time

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent performs preliminary analysis of write requests to determine the appropriate update strategy before execution. By pre-evaluating write patterns, data size, and access sequences, the system can prepare the optimal update approach, reducing the overhead impact of out-of-place updates on response time while still achieving lifespan extension

Inventive Principle:
Principle #10Preliminary action

3Productivity

If threshold-based selection is used to determine update method, then write performance is optimized, but system complexity increases

Engineering Contradiction:
Improvewrite performanceVSAvoidsystem complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent uses threshold-based parameters (such as sequential write ratio thresholds, data size thresholds, or frequency thresholds) to simplify the decision-making process. Instead of complex algorithms, the system compares measured write characteristics against predefined thresholds to select the update method, thus optimizing write performance while keeping the control logic relatively simple and manageable

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS9952766B2Memory system, including memory device capable of overwrite operation, and method of operating the memory system
Publication Date: 2018.04.24 SAMSUNG ELECTRONICS CO LTD
  • US9952766B2 patent drawing
  • US9952766B2 patent drawing
  • US9952766B2 patent drawing

AI summary

A memory device capable of performing an overwrite operation, a memory system, and a method of operating the memory system are provided. The method includes receiving one or more write requests, a logical address and data corresponding to the one or more write requests; comparing a result of analyzing at least one of the received one or more write requests, logical address, and data with a threshold value; and writing data using a first update method or a second update method, based on a result of the comparison. When the first update method is selected, the data are written in a region indicated by a physical address corresponding to the logical address according to address mapping information. When the second update method is selected, information of the physical address corresponding to the logical address is changed, and the data are written in a region indicated by the changed physical address.