Semiconductor Memory Tag Bit Refresh Control
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Solution Overview
Problem
Traditional dynamic random access memory (DRAM) requires periodic refresh operations for memory cells, leading to high power consumption due to the need to refresh all memory rows or groups sequentially.
Innovation Solution
A semiconductor memory structure is introduced, comprising a main memory area and a tag memory area, where flag bits indicate the state of memory groups, allowing for targeted refresh operations only on occupied memory cells, thereby reducing unnecessary refreshes and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If all memory rows are refreshed sequentially, then data retention is maintained, but power consumption increases
Solution Approach 1:
The memory array is divided into multiple memory groups, each with its own flag bit, allowing selective refresh of only occupied groups rather than refreshing all rows sequentially
Solution Approach 2:
Different memory groups are treated differently based on their occupation status - occupied groups receive refresh operations while unoccupied groups are skipped, optimizing power consumption
2Productivity
If memory rows are divided into groups for refresh, then refresh efficiency improves, but power consumption remains high
Solution Approach 1:
Flag bits are set in advance to indicate occupied memory groups before refresh operations, enabling the controller to identify and refresh only the necessary groups without scanning all groups
Solution Approach 2:
The flag bit system provides feedback about memory group occupation status to the controller, allowing intelligent decision-making about which groups need refreshing
Data Source
AI summary
A semiconductor memory includes a main memory area and a tag memory area. A plurality of memory groups are set in the main memory area and a plurality of flag bits are set in the tag memory area. Each of the plurality of memory groups has a corresponding relationship with one of the plurality of flag bit. The flag bit is at least configured to indicate whether at least one memory cell in the memory group has a specific state. The specific state includes an occupied state.