Memory Device Target Address Refresh for Data Integrity
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Solution Overview
Problem
Memory devices face data deterioration due to word line disturbances, which can lead to data loss as electrons in memory cell capacitors are affected by electromagnetic waves when word lines are toggled, and existing refresh operations may not adequately prevent this.
Innovation Solution
A memory device with multiple banks and redundancy word lines, utilizing latch units to generate and manage target addresses for selective refresh operations, ensuring proper word line refresh and data preservation by adjusting addresses and operation values during target refresh sections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If word lines are toggled in the active state and precharge state, then memory operations can be performed, but electromagnetic waves are generated that introduce or drain electrons from memory cell capacitors, causing data damage
Solution Approach 1:
The patent applies preliminary action by performing refresh operations on word lines before they are toggled for normal memory operations. The refresh operation pre-charges the memory cell capacitors associated with each word line, ensuring that electrons are replenished before potential electromagnetic interference from subsequent word line toggling can occur. This proactive approach prevents data loss rather than correcting it after damage occurs.
Solution Approach 2:
The patent implements continuity of useful action by integrating refresh operations into the normal memory operation cycle. Instead of treating refresh as a separate periodic task, the system continuously performs refresh operations on word lines that are about to be activated, ensuring that protective electron replenishment occurs seamlessly alongside computational operations. This continuous protective action maintains data integrity without significantly interrupting productivity.
2Loss of energy
If traditional refresh operations are used, then power consumption during data retention is minimized, but they do not adequately prevent data deterioration caused by word line electromagnetic disturbances
Solution Approach 1:
The patent applies local quality by selectively refreshing only those word lines that are about to be activated or have been activated, rather than uniformly refreshing all word lines in the memory array. The refresh operation is localized to specific word line groups based on the operational schedule, applying protective electron replenishment only where and when electromagnetic disturbances are expected to occur. This targeted approach maintains low overall power consumption while providing focused protection against data deterioration.
Solution Approach 2:
The system performs self-service by automatically managing the refresh schedule based on its own operational patterns. The memory controller monitors which word lines will be activated and autonomously triggers refresh operations on those specific word lines without external intervention. This self-regulating mechanism ensures that refresh operations are synchronized with operational needs, preventing data loss while minimizing unnecessary power consumption from redundant refresh operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents data deterioration by effectively managing word line refresh operations, ensuring accurate data retention through targeted address generation and operation in memory devices, thereby maintaining data integrity.
Implementation Method 1
a capacitor storing charges (or data). 'High' (logic 1) or 'low' (logic 0) of data is determined depending on whether a charge is present in the capacitor of a memory cell
Implementation Method 2
the electrons of the cell capacitors included in the memory cells coupled to the adjacent word lines are introduced/drained by electromagnetic waves generated when the word line is toggled
Data Source
AI summary
A memory device includes a plurality of banks suitable for including a plurality of word lines, a plurality of latch units each suitable for generating a first address by inverting a predetermined bit of an address of an activated word line of a corresponding bank and latching the first address as a target address in sections other than a target refresh section, and latching an operation address as the target address once in an all-bank refresh section of the target refresh section, wherein all of the plurality of banks are refreshed in the all-bank refresh section. All the plurality of banks are refreshed in the all-bank refresh section, and an address operation unit suitable for generating the operation address by adding or subtracting an operation value to or from the target address. A word line among the plurality of word lines that is selected using the target address may be refreshed in the target refresh section.