Semiconductor Memory Target Refresh via Controller-Device Address Sampling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor memory devices scale down, the burden on counting circuits for target refresh operations increases, and existing technologies face inefficiencies in selecting word lines for target refresh operations, leading to potential data loss due to row hammering phenomena.
Innovation Solution
A memory system where a memory controller and memory device collaborate to generate target addresses for target refresh operations, using a combination of high-frequency and randomly sampled addresses to reduce the burden on the memory device and enhance refresh operation accuracy, thereby preventing unnecessary refreshes and optimizing target address selection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the memory device performs target refresh operations by counting all active addresses, then the accuracy of selecting word lines for refresh is improved, but the device complexity and area occupied by counting circuits increase
Solution Approach 1:
The address counting function is segmented between the memory controller and memory device. The memory controller performs initial address sampling and provides target addresses to the memory device, which then executes the refresh operations. This division reduces the complexity of counting circuits within the memory device while maintaining accurate target word line selection.
Solution Approach 2:
The memory controller acts as an intermediary that performs address sampling and provides processed target addresses to the memory device. This intermediary role reduces the burden on the memory device's counting circuits while ensuring accurate identification of word lines needing refresh, thus resolving the contradiction between precision and complexity.
2Reliability
If the memory device performs frequent target refresh operations, then the reliability of data retention is improved, but the loss of time and energy consumption increase
Solution Approach 1:
Instead of performing refresh operations uniformly across all word lines, the system applies target refresh operations only to specific word lines identified as having high activation counts or susceptible to row hammering. This localized approach maintains data retention reliability for at-risk word lines while reducing unnecessary refresh operations on other word lines, thereby minimizing time and energy consumption.
Solution Approach 2:
The memory controller performs preliminary address sampling and identifies target word lines before the memory device executes refresh operations. This preliminary action allows the memory device to perform refresh operations more efficiently by having pre-identified targets, reducing the time and energy required for each refresh operation while maintaining high reliability.
3Measurement precision
If the memory device uses counting circuits to identify target word lines, then the accuracy of target refresh operations is improved, but the area occupied by counting circuits increases
Solution Approach 1:
The address counting and sampling functionality is extracted from the memory device and transferred to the memory controller. The memory controller performs the counting and sampling operations externally, providing only the necessary target addresses to the memory device. This extraction significantly reduces the area occupied by counting circuits within the memory device while maintaining accurate target word line identification.
Solution Approach 2:
The memory controller serves as an intermediary that performs the area-intensive counting and sampling operations externally. This intermediary approach allows the memory device to maintain high accuracy in target address selection without requiring large counting circuits within its own architecture, thus resolving the contradiction between precision and area.
Data Source
AI summary
A memory system includes: a memory controller suitable for: generating a first target address by sampling an active address according to an active command, providing the active address together with the active command, and providing a first target refresh command together with the first target address; and a memory device suitable for: generating a second target address by sampling the active address according to the active command, performing a target refresh operation on at least one word line corresponding to the first target address according to the first target refresh command, and performing the target refresh operation on at least one word line corresponding to the second target address according to a second target refresh command.


