Memory Sub-System Temperature Correction via Write Data Offsets
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Solution Overview
Problem
Memory sub-systems, such as solid-state drives, face issues with temperature-dependent behavior of flash memory cells, leading to misidentification of programmed states due to temperature differences between write and read operations, resulting in data retrieval errors.
Innovation Solution
Embedding write temperature data in logical-to-physical table entries allows for the determination of offset threshold voltages, compensating for charge level shifts caused by temperature changes, ensuring accurate data retrieval by adjusting read operations based on stored write temperature information.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature correction is not applied, then device complexity is reduced, but data retrieval accuracy deteriorates due to temperature-dependent behavior of flash memory cells
Solution Approach 1:
The patent applies preliminary action by embedding write temperature data in L2P table entries during the write operation. This temperature information is stored in advance and later used during read operations to determine appropriate offset threshold voltages, enabling proactive compensation for temperature-induced charge level shifts without adding complex real-time temperature sensing and adjustment mechanisms.
Solution Approach 2:
The patent uses offset threshold voltages as an intermediary mechanism to bridge the gap between write and read operations at different temperatures. By calculating and applying these offset voltages based on stored temperature data, the system mediates the temperature-dependent behavior of flash memory cells, allowing accurate data retrieval without directly modifying the memory cell characteristics.
2Measurement precision
If offset threshold voltages are calculated and applied, then programmed state identification accuracy is improved, but processing time increases
Solution Approach 1:
The patent performs preliminary action by pre-calculating and storing write temperature data in L2P table entries during write operations. This eliminates the need for real-time temperature measurement and calculation during read operations, as the temperature information is already available from the embedded data, enabling fast retrieval and offset voltage determination.
Solution Approach 2:
The system applies self-service by using the write temperature data that is already embedded in the L2P table entries to automatically determine the appropriate offset threshold voltages during read operations. The stored temperature information serves the dual purpose of both recording write conditions and enabling read correction, eliminating the need for separate temperature sensing and calculation mechanisms.
3Adaptability or versatility
If write temperature data is embedded in L2P table entries, then temperature correction capability is improved, but storage space requirements increase
Solution Approach 1:
The patent applies merging by combining write temperature data with L2P table entries into a single integrated data structure. Instead of storing temperature information separately or using dedicated temperature sensors, the temperature data is merged with the existing logical-to-physical mapping information, allowing dual-purpose use of the same storage space for both address translation and temperature correction.
Solution Approach 2:
The L2P table entries serve multiple functions: they provide logical-to-physical address mapping and simultaneously store write temperature data for future read operations. This multi-functionality eliminates the need for separate temperature storage mechanisms, maximizing the utility of existing storage resources while enabling comprehensive temperature correction capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances data integrity by preventing misidentification of programmed states, improving read accuracy and reducing errors, while also allowing for preemptive temperature correction, thus maintaining data reliability across varying temperatures.
Implementation Method 1
temperature-dependent behavior of flash memory cells, leading to misidentification of programmed states due to temperature differences between write and read operations
Data Source
AI summary
A memory device may receive a read request describing a logical address at the memory device. The memory device may obtain a table entry associated with the logical address. The table entry comprises a physical address corresponding to the logical address and a write temperature data indicating a write temperature for the logical address. The memory device may determine a corrected threshold voltage for reading the physical address based at least in part on the write temperature data and read the physical address using the corrected threshold voltage.