Semiconductor Memory Test Decoding Select Circuit

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Solution Overview

Problem

In semiconductor memory apparatuses, it is challenging to discern defective lines due to extensive electrical coupling, making it difficult to identify and substitute defective bit or word lines effectively.

Innovation Solution

The semiconductor memory apparatus includes a test decoding select circuit that generates enable signals for normal, redundancy, and dummy lines, allowing selective enabling of these lines in response to an address and test signals, facilitating easy identification of defective lines during testing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a large number of lines are electrically coupled to each other, then the semiconductor memory apparatus can store and access data efficiently, but it becomes difficult to discern defective lines when a line defect occurs

Engineering Contradiction:
Improvedata storage and access efficiencyVSAvoiddefective line identification
Core Design Contradiction:
ProductivityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent segments the line selection function by introducing separate decoding enable signals for normal lines (N_en), redundancy lines (R_en), and dummy lines (D_en). This segmentation allows independent control and testing of different line types, making defective line identification easier while maintaining efficient data storage and access through the integrated line structure.

Inventive Principle:
Principle #1Segmentation

2Reliability

If redundancy lines and dummy lines are disposed in the semiconductor memory apparatus, then defective lines can be substituted or protected, but the device complexity increases due to multiple line types and decoding circuits

Engineering Contradiction:
Improvedefective line substitution capabilityVSAvoidmultiple line types and decoding circuits
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements multi-functionality by designing the decoding enable signal generation circuit to control normal, redundancy, and dummy lines through a unified testing mechanism. The test entry signal (TM_entry) and test code (TM_code) can selectively activate different line types, allowing a single decoding circuit structure to serve multiple functions: normal operation, redundancy substitution, and dummy line testing.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Difficulty of detecting and measuring

If separate decoding enable signals are generated for normal, redundancy, and dummy lines, then defective lines can be easily identified during testing, but the test decoding select circuit complexity increases

Engineering Contradiction:
Improvedefective line detection easeVSAvoidtest decoding select circuit
Core Design Contradiction:
Difficulty of detecting and measuringVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-organizing the decoding enable signal generation logic in the test decoding select circuit. The circuit is designed with dedicated logic paths that respond to specific test codes to generate appropriate enable signals for normal, redundancy, or dummy lines. This preliminary structuring of the testing mechanism enables easy defective line identification without requiring complex runtime decision-making.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10643731B2Semiconductor memory apparatus
Publication Date: 2020.05.05 SK HYNIX INC
  • US10643731B2 patent drawing
  • US10643731B2 patent drawing

AI summary

A semiconductor memory apparatus includes a test decoding select circuit. The test decoding selective circuit is configured to generate a normal decoding enable signal, a redundancy decoding enable signal, and a dummy decoding enable signal, in response to a test entry signal, a test code, and an active signal.