Memory Test Apparatus Defective Column Selection
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Solution Overview
Problem
Current test apparatuses for flash memory devices are time-consuming during memory repairing analysis due to the need to write and read failure information, which limits their ability to perform other operations simultaneously and increases test time as memory capacity grows.
Innovation Solution
A test apparatus that includes a testing section, a flag memory, a counter memory, and a selecting section to identify and prioritize defective columns for replacement using flags and count of defective blocks, allowing for efficient selection and replacement without reading compressed failure information.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the test apparatus writes and reads failure information from the failure memory to perform memory repairing analysis, then the analysis can be completed with accurate failure data, but the test time increases significantly
Solution Approach 1:
The patent applies preliminary action by maintaining a failure information table that is updated in real-time during the testing process. Instead of writing all failure information to memory and then reading it back for analysis, the analysis data is prepared incrementally as tests are performed. This allows the memory repairing analysis to be conducted with accurate failure data while significantly reducing the time required, as the information is already organized and ready for analysis without requiring a separate read operation.
2Measurement precision
If the test apparatus performs memory repairing analysis by writing and reading failure information sequentially, then the analysis can be completed, but other operations cannot be performed simultaneously
Solution Approach 1:
The patent implements continuity of useful action by enabling parallel operations during the testing process. While the testing section continues to test memory blocks and update the failure information table, the selecting section can simultaneously perform memory repairing analysis using the data already available in the table. This eliminates idle time and allows multiple operations to proceed concurrently, improving overall test process efficiency while maintaining complete and accurate failure analysis.
3Quantity of substance
If the flash memory capacity is increased, then the storage capability is improved, but the test time is expected to increase
Solution Approach 1:
The patent addresses the issue of increasing test time with larger memory capacities by implementing preliminary action through the failure information table. As memory blocks are tested, failure information is immediately recorded and organized in the table, allowing analysis to begin incrementally rather than waiting for complete memory testing. This approach enables the test apparatus to handle larger capacity flash memories efficiently, as the analysis process can proceed with available data without requiring proportional increases in total test time.
Data Source
AI summary
There is provided a test apparatus for testing a memory under test that includes therein a plurality of blocks and one or more repairing columns. The test apparatus includes a testing section, a flag memory that stores thereon a flag indicating whether each column is defective, a counter memory that stores thereon the number of defective blocks in association with each column, a failure writing section that writes a flag indicating that a column is defective into the flag memory under a condition that one of the following conditions is satisfied: when a test result indicates that the column is defective; and when a flag stored on the flag memory in association with the column indicates that the column is defective, a counting section that increments the number of defective blocks stored on the counter memory in association with the column under a condition that the test result indicates that the column is defective and the flag indicating that the column is defective is not stored on the flag memory in association with the column, and a selecting section that selects columns to be replaced with the repairing columns based on the number of defective blocks stored in association with each column.


