Nonvolatile Memory Thermal Throttling via Charge Pump Stage Control

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Solution Overview

Problem

Conventional storage devices face overheating issues due to increased power consumption, leading to potential failure, as they lack effective thermal management mechanisms, particularly in miniaturized electronic devices where heat dissipation is challenging.

Innovation Solution

Incorporating an on-chip thermal throttling system within nonvolatile memory devices, utilizing a digital temperature sensor, a charge pump circuit, and a control logic circuit to adjust the number and timing of charge pump stages based on temperature readings, thereby controlling current consumption and managing heat generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the nonvolatile memory device increases power consumption to improve performance, then processing speed and operational capability are improved, but heat generation increases leading to overheating and potential failure

Engineering Contradiction:
Improveprocessing speedVSAvoidheat generation
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The digital temperature sensor continuously monitors temperature before critical overheating occurs, and the control logic circuit proactively adjusts charge pump operation in advance. By performing preliminary temperature assessment and preemptive power adjustment, the system prevents overheating rather than reacting after damage occurs, maintaining both high performance and thermal safety

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The charge pump circuit dynamically adjusts its operation based on real-time temperature feedback. The control logic circuit modifies the number of charge pump stages activated and the timing of voltage generation according to current temperature conditions, enabling the system to optimize performance while preventing overheating through continuous adaptation

Inventive Principle:
Principle #15Dynamics

2Volume of moving object

If the storage device is miniaturized to reduce size, then portability and integration are improved, but heat dissipation capability deteriorates

Engineering Contradiction:
Improvedevice sizeVSAvoidheat dissipation
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The miniaturized memory device performs self-thermal management through integrated on-chip temperature monitoring and autonomous power adjustment. The digital temperature sensor and control logic circuit work together to automatically regulate charge pump operation based on internal temperature, eliminating the need for external thermal management hardware and enabling the device to serve its own thermal control needs within the compact form factor

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The system changes operational parameters of the charge pump circuit based on temperature conditions. By adjusting the number of active charge pump stages and modifying voltage generation timing, the system dynamically alters power consumption characteristics to match thermal dissipation capabilities of the miniaturized device, maintaining performance within safe thermal limits

Inventive Principle:
Principle #35Parameter changes

3Speed

If the charge pump circuit operates continuously at full capacity, then voltage generation speed is improved, but current consumption increases causing thermal throttling

Engineering Contradiction:
Improvevoltage generation speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The control logic circuit activates only the necessary number of charge pump stages based on current temperature conditions and voltage requirements. Instead of running all charge pump stages continuously, the system applies partial action by selecting subsets of stages, reducing current consumption while still meeting voltage generation needs. This prevents thermal throttling by avoiding excessive current draw

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The charge pump circuit operates in periodic cycles with variable duration and intensity based on temperature feedback. The control logic circuit adjusts the timing and frequency of charge pump activation, creating periodic operation patterns that allow thermal dissipation between bursts of high-current operation. This periodic action maintains voltage generation capability while preventing sustained overheating

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient thermal management by optimizing current consumption and reducing overheating risks, ensuring reliable operation of memory chips and extending their lifespan in compact electronic devices.

Implementation Method 1

a digital temperature sensor configured to sense a temperature of at least one predetermined region of the at least one nonvolatile memory device and to generate a temperature code

Methodology Applied
Scientific EffectTemperature sensing:

Implementation Method 2

a charge pump circuit including pump units connected in series configured to receive an external voltage and to perform a charge pumping operation, and configured to output a pump voltage

Methodology Applied
Scientific EffectCharge pumping:

Implementation Method 3

a control logic circuit configured to perform an on-chip thermal throttling operation according to the temperature code, and wherein the on-chip thermal throttling operation controls timing of a wordline voltage applied to at least one of the wordlines

Methodology Applied
Scientific EffectThermal throttling:

Implementation Method 4

Conventional storage devices face overheating issues due to increased power consumption

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS20240194273A1Nonvolatile memory device, storage device including the same, and method of operating the same
Publication Date: 2024.06.13 SAMSUNG ELECTRONICS CO LTD
  • US20240194273A1 patent drawing
  • US20240194273A1 patent drawing
  • US20240194273A1 patent drawing

AI summary

A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.