Memory Trim Level Adjustments for Read-Dominant Blocks
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Solution Overview
Problem
Memory devices, particularly non-volatile memory devices like NAND, face reduced life expectancy due to frequent read operations and infrequent write operations, leading to unnecessary cycling and read disturb issues, which existing technologies fail to effectively address.
Innovation Solution
The implementation of adjustment circuitry within memory sub-systems to dynamically adjust trim levels based on the usage patterns of memory blocks, specifically increasing the read window budget for blocks that are read frequently and written to infrequently, thereby reducing the number of refresh operations and extending the device's life expectancy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If frequent read operations are performed on memory blocks, then data accessibility is improved, but read disturb errors increase and device life expectancy decreases
Solution Approach 1:
The patent applies dynamics by making the read window budget configurable and adjustable based on usage patterns. The system dynamically modifies the read window budget for specific memory blocks identified as read-dominant, allowing the read operation parameters to adapt to actual usage characteristics rather than remaining static. This enables the system to optimize between read speed and reliability based on observed behavior.
Solution Approach 2:
The patent changes physical parameters by modifying the read window budget, which is a critical parameter affecting read operations. By adjusting this parameter for read-dominant blocks, the system alters the voltage window used during read operations, thereby reducing read disturb effects while maintaining data accessibility. This parameter adjustment is the core mechanism for resolving the contradiction between speed and reliability.
2Reliability
If trim levels are adjusted to reduce refresh operations, then device life expectancy is improved, but performance may be impacted
Solution Approach 1:
The patent applies local quality by differentiating treatment between different types of memory blocks. Instead of applying a uniform read window budget to all blocks, the system identifies read-dominant blocks and applies modified (increased) read window budgets specifically to those blocks. This localized adjustment allows the system to extend life expectancy for blocks that benefit most while maintaining standard performance characteristics for other blocks.
Solution Approach 2:
The system employs self-service by automatically identifying read-dominant blocks based on usage patterns and autonomously adjusting their read window budgets without requiring external intervention. The memory sub-system monitors its own usage characteristics and performs trim level adjustments independently, enabling the device to self-optimize its performance and reliability characteristics.
3Reliability
If read window budget is increased for read-dominant blocks, then read disturb errors are minimized, but refresh operations may increase
Solution Approach 1:
The patent applies partial action by selectively increasing the read window budget only for read-dominant blocks rather than all memory blocks. This partial adjustment allows the system to minimize read disturb errors where they occur most frequently while avoiding unnecessary increases in refresh operations for blocks that do not require enhanced protection. The selective approach optimizes the trade-off between reliability and energy consumption.
Data Source
AI summary
A method includes determining a quantity of refresh operations performed on a block of a memory device of a memory sub-system and determining a quantity of write operations and a quantity of read operations performed to the block. The method also includes determining the block is read dominant using the quantity of write operations and the quantity of read operations and determining whether the quantity of refresh operations has met a criteria. The method further includes, responsive to determining that the block is read dominant and that the quantity of refresh operations has met the criteria, modifying trim settings used to operate the block of the memory device.