Semiconductor Memory Device Variable Preamble Synchronization
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Solution Overview
Problem
Conventional semiconductor memory devices face challenges in synchronizing the strobe state of a data strobe signal due to a fixed generation cycle of the preamble state, which can lead to abnormal operations if the generation cycle is increased without considering the operating frequency.
Innovation Solution
A semiconductor memory device and method that allow for variable generation cycles of the preamble state of the data strobe signal by adjusting the clock cycle, enabling flexible synchronization with the operating frequency through setting CAS latency, burst length, and preamble cycle signals during mode setting operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If the generation cycle of the preamble state is increased, then the synchronization time is improved, but the operating frequency compatibility deteriorates
Solution Approach 1:
The patent applies dynamics by making the preamble generation cycle variable rather than fixed. The control circuit dynamically adjusts the preamble generation cycle based on the operating frequency of the memory device, allowing the system to adapt its timing characteristics to different frequency requirements while maintaining proper synchronization.
Solution Approach 2:
The patent changes the parameter of preamble generation cycle from a fixed value to a variable parameter that can be adjusted according to operating frequency. The control circuit receives frequency information and modifies the preamble cycle parameter accordingly, enabling the system to optimize synchronization time for each operating frequency while maintaining compatibility across different frequency ranges.
2Device complexity
If the preamble state generation cycle is fixed, then the device complexity is reduced, but the reliability deteriorates due to abnormal operations at different frequencies
Solution Approach 1:
The control circuit implements dynamic adjustment of the preamble generation cycle based on detected operating frequency. This dynamic approach prevents abnormal operations that would occur with a fixed cycle at different frequencies, thereby improving reliability without requiring overly complex manual configuration systems.
Solution Approach 2:
The control circuit automatically detects the operating frequency and self-adjusts the preamble generation cycle without external intervention. This self-service mechanism ensures reliable operation across different frequencies while keeping the overall device complexity manageable, as the system autonomously configures itself based on its operating conditions.
Data Source
AI summary
A latency signal generating method and a corresponding semiconductor memory device, among other things, are disclosed. Such a method includes: receiving a clock signal for the semiconductor memory device; receiving a mode characterization signal; providing the DQS; and adapting the duration of a preamble state of the DQS according to the mode characterization signal to promote conformance of a strobe state of the DQS with the clock signal.