Nonvolatile Memory Verify Time Adjustment for CSL Noise

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Nonvolatile flash memory devices face reliability issues due to CSL noise, which causes threshold voltage distributions to widen, leading to errors in read and program operations by misinterpreting on-cells as off-cells.

Innovation Solution

A method and apparatus for a nonvolatile memory device that decodes page addresses to adjust the maximum verify time of program loops, allowing for tailored verify operations to reduce the impact of CSL noise, thereby improving programming efficiency and accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the maximum verify time of program loops is increased to improve programming accuracy and reduce errors caused by CSL noise, then the reliability of read and program operations is improved, but the total programming time increases

Engineering Contradiction:
Improveprogramming accuracyVSAvoidprogramming time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies local quality by differentiating verify time allocation based on page address types. LSB pages receive shorter verify times while MSB pages receive longer verify times, optimizing the balance between reliability and speed for different data types within the same memory system.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements dynamic adjustability of verify time parameters based on real-time detection of page address types. The control logic dynamically selects appropriate verify time values from a set of predetermined values, allowing the system to adapt its programming parameters to specific operational requirements.

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If the verify operation time is extended to accurately distinguish program states and reduce misinterpretation errors, then the measurement precision of threshold voltage detection is improved, but the duration of program operations increases

Engineering Contradiction:
Improvethreshold voltage detection accuracyVSAvoidprogram operation duration
Core Design Contradiction:
Measurement precisionVSDuration of action of moving object

Solution Approach 1:

The patent applies local quality by implementing different measurement precision levels for different page types. MSB pages, which are more susceptible to CSL noise, receive extended verify times for higher measurement precision, while LSB pages use standard verify times, thus optimizing precision where most needed without universally increasing operation duration.

Inventive Principle:
Principle #3Local quality

3Ease of operation

If uniform verify time is used for all page addresses, then the device complexity is reduced and ease of operation is improved, but the adaptability to different page types affected by CSL noise varies is limited

Engineering Contradiction:
Improveoperation simplicityVSAvoidpage type optimization
Core Design Contradiction:
Ease of operationVSAdaptability or versatility

Solution Approach 1:

The patent implements dynamic adaptability through automatic detection of page address types and selection of appropriate verify time parameters. The control logic dynamically adjusts operation parameters based on the detected page type, providing optimization without requiring manual configuration or complex user intervention.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system performs self-service by automatically detecting page address types and selecting optimal verify time parameters without external intervention. The control logic autonomously manages the verification process, adapting to different page types and CSL noise conditions based on inherent system observations.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS8848450B2Method and apparatus for adjusting maximum verify time in nonvolatile memory device
Publication Date: 2014.09.30 SAMSUNG ELECTRONICS CO LTD
  • US8848450B2 patent drawing
  • US8848450B2 patent drawing
  • US8848450B2 patent drawing

AI summary

A nonvolatile memory device is programmed by decoding a received address, determining whether the received address is a first type of page address or a second type of page address, adjusting a maximum verify time of a program loop used to verify a program state of page data according to the determined type of page address, and performing a verify operation during the adjusted maximum verify time.