Memory Cell Via Structure With Integrated Dielectric Capacitance Tuning
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Solution Overview
Problem
Existing semiconductor manufacturing processes require additional steps to form different dielectric layers for memory and logic devices, increasing manufacturing complexity and cost due to differing electrical requirements such as capacitance needs.
Innovation Solution
A method for manufacturing a semiconductor device that involves forming a substrate, followed by the sequential deposition of conductive wiring layers and dielectric layers with varying dielectric constants, allowing for integrated dielectric layer formation that meets the capacitance requirements of both memory and logic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional processes are used to form different dielectric layers in memory and logic devices, then the capacitance requirements of each device type are met, but manufacturing cost and complexity are increased
Solution Approach 1:
The patent merges the dielectric layer formation processes for memory devices and logic devices into a single integrated process. By forming a common first dielectric layer that serves both device types, the invention eliminates the need for separate dielectric layer formation processes, thereby reducing manufacturing complexity while still meeting the distinct capacitance requirements through selective second dielectric layer formation.
Solution Approach 2:
The patent applies local quality by forming a second dielectric layer selectively over the memory device region but not over the logic device region. This localized approach allows the memory device to achieve its required capacitance through the combination of first and second dielectric layers, while the logic device uses only the first dielectric layer, thus meeting different electrical requirements without increasing overall process complexity.
2Reliability
If additional processes are used to form different dielectric layers in memory and logic devices, then the capacitance requirements of each device type are met, but manufacturing cost is increased
Solution Approach 1:
The patent merges the dielectric layer formation processes for memory devices and logic devices into a single integrated process. By forming a common first dielectric layer that serves both device types, the invention eliminates the need for separate dielectric layer formation processes, thereby reducing manufacturing complexity while still meeting the distinct capacitance requirements through selective second dielectric layer formation.
Solution Approach 2:
The first dielectric layer is designed to serve a universal function for both memory devices and logic devices. This multi-functional layer provides the base dielectric structure for both device types, reducing the need for device-specific process steps and thereby lowering manufacturing costs while maintaining the ability to meet different capacitance requirements through selective additional layer formation.
3Reliability
If separate dielectric layers are formed for memory and logic devices, then specific capacitance needs are met, but the manufacturing process becomes more time-consuming
Solution Approach 1:
The patent merges the dielectric layer formation processes for memory devices and logic devices into a single integrated process. By forming a common first dielectric layer that serves both device types, the invention eliminates the need for separate dielectric layer formation processes, thereby reducing manufacturing complexity while still meeting the distinct capacitance requirements through selective second dielectric layer formation.
Solution Approach 2:
The patent performs preliminary action by forming the first dielectric layer in advance before the devices are separated into memory and logic device regions. This preliminary dielectric layer formation serves as a common base for both device types, allowing subsequent selective processing to meet different capacitance requirements without requiring separate initial dielectric formation steps, thereby improving manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process by integrating the formation of dielectric layers for both memory and logic devices, reducing complexity and cost while meeting the specific capacitance requirements of each device type.
Implementation Method 1
varying dielectric constants, allowing for integrated dielectric layer formation that meets the capacitance requirements of both memory and logic devices
Data Source
AI summary
A semiconductor device includes a bottom electrode via, a top electrode via over the bottom electrode via, a memory cell between the bottom electrode via and the top electrode via, a first dielectric layer over the memory cell, and a second dielectric layer over the first dielectric layer, and a via structure separated from the memory cell. A height of the via structure is substantially equal to a sum of a height of the bottom electrode via, a height of the memory cell, and a height of the top electrode via. The first dielectric layer partially surrounds a first portion of the via structure, and the second dielectric layer partially surrounds a second portion of the via structure. A height of the second portion of the via structure is greater than a height of the first portion of the via structure.