3D Memory Via Isolation Using Dummy Stack Matching
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Solution Overview
Problem
Current memory devices face challenges in achieving high-capacity data storage with efficient vertical integration of semiconductor devices, particularly in maintaining reliable electrical connections and minimizing process defects due to structural differences between cell stacked structures and dummy structures.
Innovation Solution
A memory device design featuring a cell stacked structure with a channel structure passing through, a dummy structure adjacent to the cell stacked structure, and a through via contact extending vertically, with a capping insulation pattern insulating the via contact from metal patterns, ensuring reliable electrical connections and minimizing structural differences to prevent defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through via contact is formed to connect cell stacked structures and peripheral circuits, then electrical connection reliability is improved, but process defects increase due to structural differences between cell stacked structures and dummy structures
Solution Approach 1:
The dummy structure is designed to copy the structural characteristics of the cell stacked structure, including the alternating insulation layers and metal patterns. This creates a replicated structure that maintains structural consistency across different regions, allowing through via contacts to be formed with uniform processes and reducing manufacturing defects caused by structural variations.
Solution Approach 2:
The dummy structure uses the same materials and layer configuration as the cell stacked structure (insulation layers and metal patterns with identical materials), creating homogeneous structural properties. This homogeneity ensures that etching, deposition, and other fabrication processes behave consistently across both structures, minimizing process defects.
2Quantity of substance
If vertical stacking of memory cells is implemented to increase storage capacity, then data storage capacity is improved, but device complexity increases due to multiple stacked layers
Solution Approach 1:
The memory device is segmented into distinct functional regions: cell stacked structures for data storage, dummy structures for process compatibility, and peripheral circuits for control. Each segment has a specific function and can be optimized independently, managing overall device complexity while maximizing storage capacity through vertical stacking.
Solution Approach 2:
The patent transitions from planar two-dimensional layout to three-dimensional vertical stacking by implementing memory cells stacked in the vertical direction. This dimensional change dramatically increases storage capacity within the same footprint, allowing multiple layers of insulation and metal patterns to be stacked vertically to form high-density memory structures.
3Stability of the object's composition
If dummy structures are formed with alternating insulation layers and metal patterns, then structural consistency is improved, but manufacturing steps increase
Solution Approach 1:
The formation of the dummy structure merges multiple functions into a single structural element: it provides structural consistency with the cell stacked structure, serves as a placeholder for process alignment, and creates appropriate electrical isolation. By combining these functions into one integrated structure formed through coordinated deposition and etching steps, the patent achieves structural consistency without proportionally increasing manufacturing complexity.
Data Source
AI summary
A memory device includes a cell stacked structure on a substrate, the cell stacked structure including insulation layers and gate patterns alternately stacked, a channel structure passing through the cell stacked structure, the channel structure extending in a vertical direction, a dummy structure on the substrate, the dummy structure being spaced apart from the cell stacked structure, and the dummy structure including insulation layers and metal patterns alternately stacked, a first through via contact passing through the dummy structure, the first through via contact extending in the vertical direction, and a first capping insulation pattern between a sidewall of the first through via contact and each of the metal patterns in the dummy structure, the first capping insulation pattern insulating the first through via contact from each of the metal patterns.