Semiconductor Memory Voltage Control Segmentation

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Solution Overview

Problem

Conventional semiconductor memory devices lack the ability to independently control internal boosting voltage and array voltage, as they depend on a single internal reference voltage, making it difficult to manage these voltages independently.

Innovation Solution

A semiconductor memory device with a reference voltage generating unit, internal reference voltage generating unit, and internal supply voltage generating unit that convert external voltage into multiple internal reference and supply voltages, allowing for independent control of these voltages through comparison circuits and control circuits using resistors and transistors, and a test Mode Register Set signal to adjust voltage generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single internal reference voltage is used to generate both internal boosting voltage and array voltage, then the device complexity is reduced, but the ability to independently control these voltages is lost

Engineering Contradiction:

Improvevoltage generation circuit complexityVSAvoidindependent voltage control capability

Core Design Contradiction:

Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent divides the voltage generation system into separate segments: a first internal reference voltage generating unit for generating array voltage and a second internal reference voltage generating unit for generating internal boosting voltage. This segmentation allows each voltage to be controlled independently while keeping the overall circuit manageable in complexity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by providing different reference voltages to different parts of the circuit. The first internal reference voltage is specifically used for array voltage generation, while the second internal reference voltage is used for internal boosting voltage generation, allowing each region to have optimized voltage characteristics.

Inventive Principle:

Principle #3Local quality

2Reliability

If the internal reference voltage is increased to improve array voltage, then the array voltage performance improves, but the internal boosting voltage also increases unnecessarily

Engineering Contradiction:

Improvearray voltage stabilityVSAvoidenergy wasted in boosting voltage generation

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

The patent segments the reference voltage generation into two independent units, allowing the array voltage reference to be optimized for reliability while the boosting voltage reference can be optimized for energy efficiency, without mutual interference.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent changes the parameter of reference voltage by generating two different reference voltages with different characteristics. The first internal reference voltage is optimized for array voltage stability, while the second is optimized for boosting voltage efficiency, allowing independent parameter optimization.

Inventive Principle:

Principle #35Parameter changes

3Adaptability or versatility

If separate internal reference voltage generating units are used for array voltage and internal boosting voltage, then independent voltage control is achieved, but the device complexity increases

Engineering Contradiction:

Improveindependent voltage control capabilityVSAvoidvoltage generation circuit complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Inventive Principle:

Principle #1Segmentation

4Ease of manufacture

If a single reference voltage is used for both voltages, then the ease of manufacture is improved, but the manufacturing precision of voltage levels deteriorates

Engineering Contradiction:

Improvecircuit fabrication simplicityVSAvoidvoltage level precision

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent segments the reference voltage generation into two independent units, allowing each voltage level to be precisely controlled through dedicated reference voltages while maintaining relatively simple circuit structures that are easy to manufacture.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS7639547B2Semiconductor memory device for independently controlling internal supply voltages and method of using the same

Publication Date: 2009.12.29 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a semiconductor memory device and method that can control internal supply voltages independently. The semiconductor memory device includes a memory cell array, a reference voltage generating unit, an internal reference voltage generating unit, and an internal supply voltage generating unit. The reference voltage generating unit outputs a reference voltage in response to an external voltage. The internal reference voltage generating unit converts the reference voltage into a plurality of internal reference voltages, and outputs the plurality of internal reference voltages. The internal supply voltage generating unit converts the plurality of internal reference voltages into a plurality of internal supply voltages, and outputs the plurality of internal supply voltages. A first internal reference voltage is used to generate a first internal supply voltage and a second internal reference voltage is used to generate a second internal supply voltage.