Semiconductor Memory External Voltage Interruption Circuit
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Solution Overview
Problem
Packaged semiconductor memory apparatuses are often deemed defective due to minor defects, requiring a fuse rupture operation that involves applying high external voltage, which can lead to erroneous operation during defect repair and testing.
Innovation Solution
A semiconductor memory apparatus with an external connection terminal, a fuse unit for performing a fuse rupture operation, and an interruption circuit unit that responds to a test signal to control the supply of external voltage, ensuring it is only applied during necessary operations and interrupted otherwise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If high external voltage is continuously applied during rupture operation and test operation, then the fuse rupture operation can be performed, but the semiconductor memory apparatus may be erroneously operated
Solution Approach 1:
The patent implements dynamic voltage control by switching between different voltage states based on operational mode. The interruption circuit unit dynamically adjusts the external voltage applied to the fuse unit - applying high voltage during rupture operations and interrupting or reducing voltage during test operations to prevent erroneous operation while maintaining repair capability
Solution Approach 2:
The patent introduces an interruption circuit unit as an intermediary between the external voltage source and the fuse unit. This intermediary component controls and regulates the voltage transmission, enabling selective application of high voltage only when rupture operation is intended, while blocking or reducing voltage during test operations to prevent errors
2Ease of repair
If external voltage is applied to perform fuse rupture operation, then defective bits can be repaired, but the risk of erroneous operation and damage increases
Solution Approach 1:
The patent applies preliminary anti-action by implementing the interruption circuit unit that proactively prevents harmful voltage application. The circuit anticipates potential erroneous operations by controlling voltage delivery in advance - ensuring high voltage is only applied when rupture operation is explicitly intended, thereby preventing damage before it can occur
Solution Approach 2:
The interruption circuit unit serves as a protective intermediary that mediates between the external voltage source and the vulnerable fuse unit. It filters and controls voltage delivery, allowing beneficial rupture operations while blocking harmful erroneous voltage applications, thus reducing damage risk while maintaining repair functionality
Data Source
AI summary
A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit.