Memory Device Data Access Control Using Predicted Voltage Offsets
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Solution Overview
Problem
Memory devices, such as Flash memory, face performance reduction due to excessive time spent on internal operations in response to host-side requests, and existing solutions introduce side effects that complicate data access management.
Innovation Solution
A method and apparatus for data access control in memory devices using predicted information, involving a reading parameter learning procedure to adjust reading voltage parameters, where local linear regression updates a prediction model to optimize data reading by scanning for best values and updating databases for accurate voltage control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the memory device performs internal operations in response to host-side requests, then data access control is maintained, but the overall performance is reduced due to excessive time spent on internal operations
Solution Approach 1:
The patent applies preliminary action by performing a reading parameter learning procedure in advance to generate predicted data of reading voltage parameter offsets. This prediction model is established before actual data reading operations, allowing the memory controller to pre-determine optimal reading voltage adjustments based on programmed voltage values, thereby avoiding time-consuming internal operations during host requests while maintaining data access control accuracy
2Productivity
If existing solutions are implemented to correct performance problems, then some performance issues are addressed, but side effects are introduced that complicate data access management
Solution Approach 1:
The patent applies self-service by enabling the memory controller to autonomously perform reading parameter learning and generate prediction models without external intervention. The system automatically scans for best values, performs local linear regression, and updates its own reading voltage prediction functions, eliminating the need for complex external management mechanisms while improving performance
3Measurement precision
If the reading voltage parameter is adjusted to maintain data reading correctness, then reading accuracy is improved, but the complexity of voltage control increases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the reading voltage parameter based on predicted offsets derived from programmed voltage values. Instead of using fixed voltage levels, the system modifies reading voltage parameters according to learned patterns from local linear regression, achieving accurate data reading while managing complexity through systematic parameter transformation
Data Source
AI summary
A method for performing data access control of a memory device and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device, for performing data access including data reading on the NV memory according to the plurality of host commands; and performing a reading parameter learning procedure to generate predicted data of a predicted reading voltage parameter offset regarding adjustment of a reading voltage parameter, for maintaining correctness of the data reading, for example: scanning for a best value, and adding latest information comprising the best value into a data set among one or more data sets in at least one reading-voltage control database; performing local linear regression according to the data set to update a reading voltage prediction function corresponding to a reading voltage prediction model; and generating or updating the predicted data according to the reading voltage prediction function.