Memory Voltage Regulator with Program Path Emulation
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Solution Overview
Problem
Existing voltage regulation methods for multi-level nonvolatile memory cells fail to accurately compensate for voltage drops and consider the effects of all components in program paths, leading to inefficiencies and inaccuracies in programming, particularly due to variations in program current with increasing memory cell usage.
Innovation Solution
A regulator system incorporating an operating amplifier, program path emulation apparatus, and current mirror, which emulates the electrical characteristics of bit line and sector selection units, and includes a current mirror to control current flow, allowing for precise voltage regulation and recycling of current, thereby addressing the variation in program current and improving programming accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If prior art voltage regulation methods are used, then the system structure is simple, but the voltage regulation accuracy is insufficient and cannot compensate for voltage drops along program paths
Solution Approach 1:
The patent creates a copy of the actual program path circuitry within the regulator device. The program path emulation apparatus includes emulated bit line selecting units, emulated memory cells, and emulated sector selecting units that replicate the electrical characteristics of the real program path. This allows the regulator to measure and compensate for voltage drops by testing the emulated path rather than the actual memory cells, achieving accurate voltage regulation without adding complex external measurement equipment.
Solution Approach 2:
The program path emulation apparatus serves as an intermediary between the voltage source and the actual memory cells. By placing the emulation apparatus in the program path, the system can pre-characterize and compensate for voltage drops in the bit line selecting units, path resistors, and sector selecting units before programming the actual cells, thereby improving voltage regulation accuracy without directly modifying the memory cell array.
2Productivity
If prior art regulation methods are used, then the device complexity is low, but the programming speed is insufficient
Solution Approach 1:
The regulator performs preliminary characterization of the program path voltage drops using the emulation apparatus before actual programming operations. The system pre-calculates compensation values for bit line selecting units, path resistors, and sector selecting units based on their electrical characteristics. This preliminary action allows the regulator to apply pre-computed compensation voltages during programming, eliminating the need for slow iterative adjustments and thereby improving programming speed.
Solution Approach 2:
The patent implements a feedback mechanism where the operating amplifier continuously monitors the voltage at the sector selecting units and adjusts the output voltage accordingly. The feedback loop uses the emulated program path to detect voltage drops and automatically compensates for them by adjusting the drive voltage, enabling real-time optimization of programming speed without requiring complex external control systems.
3Reliability
If prior art methods are used, then the device complexity is low, but the consideration of all components in program paths is insufficient
Solution Approach 1:
The patent segments the program path into distinct components for separate emulation and compensation: bit line selecting units, path resistors, and sector selecting units. Each component is independently emulated in the program path emulation apparatus with its own electrical characteristics. This segmentation allows the regulator to precisely characterize and compensate for voltage drops in each component individually, improving overall programming accuracy without requiring a monolithic complex structure.
Solution Approach 2:
The system creates detailed copies of all program path components including bit line selecting units, memory cell path resistors, and sector selecting units within the emulation apparatus. By copying the electrical characteristics of each component, the regulator can accurately model and compensate for voltage drops throughout the entire program path, ensuring reliable programming even as memory cells age and their characteristics change.
4Quantity of substance
If multi-level memory cells are used to maximize data storage density, then the data storage capacity increases, but the difficulty of accurately programming cells increases due to voltage drops and current variations
Solution Approach 1:
The patent creates an emulated program path that replicates the electrical characteristics of the actual program path used to program multi-level memory cells. By copying the bit line selecting units, path resistors, and sector selecting units, the system can accurately measure and compensate for voltage drops that occur during programming, ensuring precise voltage delivery to the memory cells even as they undergo multiple programming cycles and their characteristics change.
Solution Approach 2:
The regulator dynamically adjusts programming parameters including voltage levels and current compensation based on feedback from the emulation apparatus. As multi-level memory cells require precise voltage control to distinguish between multiple data states, the system modifies programming parameters in real-time to compensate for voltage drops and current variations, maintaining accurate programming despite the increased complexity of multi-level cell characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances the accuracy and efficiency of voltage regulation in memory systems by emulating the electrical characteristics of memory cell components, recycling current, and dynamically adjusting operational parameters to match the characteristics of memory cells, leading to improved data storage density and programming precision.
Implementation Method 1
an operating amplifier having a first input capable of receiving a reference voltage, a program path emulation apparatus, and a current mirror coupled to the program path emulation apparatus and a second input of the operating amplifier
Implementation Method 2
a current mirror coupled to the program path emulation apparatus and a second input of the operating amplifier, the current mirror being capable of controlling a current flowing in the program path emulation apparatus a multiple of a predetermined current
Implementation Method 3
a path resistor having a resistance substantially equal to a resistance of a program path of a memory cell of the memory device
Data Source
AI summary
A regulator for regulating a program voltage of a memory device is introduced. The regulator includes an operating amplifier, a program path emulation apparatus, and a current mirror coupled to the program path emulation apparatus and the operating amplifier. The current mirror is for controlling a current flowing in the program path emulation apparatus a multiple of a predetermined current. The program path emulation apparatus includes a bit line selection emulation unit for emulating a bit line selecting unit of the memory device, a path resistor for emulating a program path of a memory cell of the memory device, and a sector selection emulation unit for emulating a sector selecting unit of the memory device. The value of the predetermined current may be varied according to the program times of the memory cells of the memory device.