Nonvolatile Memory Voltage Generator Segmentation

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Solution Overview

Problem

There is a challenge in increasing the integration density of non-volatile memory devices like NAND flash memory while minimizing power consumption and maintaining operational stability, particularly in generating high voltages required for programming operations without causing unstable word line voltages and excessive transient peak currents.

Innovation Solution

A non-volatile memory device and system that includes a voltage generator producing a first high-voltage from a supply voltage and a second high-voltage from an external voltage, with a word-line selection circuit applying these voltages during programming operations to selected and unselected word lines, respectively, to reduce power consumption and stabilize voltage levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a single high-voltage is generated from supply voltage for all word lines, then device integration density can be increased, but transient peak currents and power consumption increase

Engineering Contradiction:

Improveintegration densityVSAvoidpower consumption

Core Design Contradiction:

Quantity of substanceVSLoss of energy

Solution Approach 1:

The patent segments the word lines into selected and unselected groups, applying different voltage levels to each segment. The selected word line receives a first high-voltage for programming, while unselected word lines receive a second high-voltage, thereby reducing overall power consumption and transient peak currents while maintaining integration density.

Inventive Principle:

Principle #1Segmentation

2Quantity of substance

If a single high-voltage is generated from supply voltage for all word lines, then device integration density can be increased, but unstable word line voltages occur

Engineering Contradiction:

Improveintegration densityVSAvoidvoltage stability

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

Inventive Principle:

Principle #1Segmentation

3Adaptability or versatility

If high-voltage is generated using internal voltage generator only, then device independence is maintained, but external voltage utilization is wasted

Engineering Contradiction:

Improvevoltage generation flexibilityVSAvoidexternal voltage utilization

Core Design Contradiction:

Adaptability or versatilityVSLoss of energy

Solution Approach 1:

The patent implements a voltage generator that can operate in multiple modes: generating high-voltage from the supply voltage for selected word lines, and utilizing external voltage for unselected word lines. This multi-functional approach optimizes power consumption and enhances adaptability to different operating conditions.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS9543032B2Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device

Publication Date: 2017.01.10 SAMSUNG ELECTRONICS CO LTD

AI summary

A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines.