Memory Device Voltage Sequencing for Program Time Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory devices face challenges in reducing program time due to inefficiencies in voltage application sequences during programming operations, which affect the speed and reliability of data storage.
Innovation Solution
A memory device and method that involve a voltage generator producing specific voltages (program, pass, hold, and verify voltages) and an operation controller to apply these voltages in a controlled sequence to word lines, including a program voltage to a selected word line, pass voltages to adjacent and remaining lines, and a ground voltage to reduce voltage magnitude quickly, followed by a verify operation with a voltage lower than the verify voltage for a determined time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If a conventional voltage application sequence is used during programming operations, then the programming process can be completed, but the program time is excessive
Solution Approach 1:
The patent applies preliminary action by pre-charging adjacent word lines to pass voltage levels before the main programming operation. This preliminary voltage application reduces the discharge time constant during the programming phase, thereby reducing overall program time and increasing programming speed.
Solution Approach 2:
The patent implements dynamics by dynamically adjusting voltage levels across different word lines during the programming operation. Specifically, it applies program voltage to selected word lines while simultaneously applying pass voltage to adjacent word lines, and dynamically switching between different voltage states (program voltage, pass voltage, hold voltage, verify voltage) to optimize the programming process and reduce time loss.
2Ease of operation
If multiple voltage levels are applied to all word lines simultaneously, then the programming operation can be performed, but the operational complexity increases
Solution Approach 1:
The patent applies local quality by differentiating voltage application based on the specific location and state of each word line. Instead of applying uniform voltage to all word lines, it selectively applies program voltage to selected word lines, pass voltage to adjacent word lines, and hold voltage to other word lines. This localized voltage management simplifies the control logic by providing clear, location-specific instructions rather than complex simultaneous control.
Data Source
AI summary
The present disclosure relates to an electronic device. A memory device includes a plurality of memory cells coupled to a plurality of word lines, a voltage generator generating program-related voltages to be applied to the plurality of word lines, an address decoder transferring the program-related voltages to the plurality of word lines, and an operation controller controlling the voltage generator and the address decoder to apply a program voltage to a selected word line among the plurality of word lines, a second pass voltage to adjacent word lines neighboring the selected word line, a first pass voltage to remaining word lines except for the selected word line and the adjacent word lines, and to apply a ground voltage to the selected word line and the first pass voltage to the adjacent word lines during a first period.