Semiconductor Memory Internal Voltage Supply Circuit for Refresh Mode

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Solution Overview

Problem

Conventional internal voltage supply circuits in semiconductor devices consume high current during refresh operations due to the application of the same high voltage in both normal and refresh modes, leading to increased power inefficiency.

Innovation Solution

An internal voltage supply circuit that generates a lower internal voltage specifically for refresh mode operations, using a switching circuit responsive to a control signal to supply either the external voltage in normal mode or the internal voltage in refresh mode, thereby reducing current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the same high voltage is applied to refresh-associated circuits in both normal mode and refresh mode, then the circuits can operate smoothly in normal mode, but current consumption increases during refresh operations

Engineering Contradiction:
Improvecircuit operation smoothnessVSAvoidcurrent consumption in refresh mode
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies dynamics by making the voltage supply mode switchable between normal mode and refresh mode. A switching circuit responds to a control signal to dynamically change the voltage supplied to refresh-associated circuits, allowing the system to adapt its power consumption characteristics to the current operational requirements while maintaining reliable circuit operation in both modes

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the voltage parameter supplied to refresh-associated circuits based on operational mode. In normal mode, a high voltage (external voltage VDD or internal voltage VINT) is supplied for smooth circuit operation. In refresh mode, a lower internal voltage is supplied to reduce current consumption, as the amount of charge driven in refresh mode is determined by capacitance and voltage level

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a high voltage is supplied to refresh-associated circuits in refresh mode, then the circuits can operate reliably, but power efficiency is reduced

Engineering Contradiction:
Improverefresh operation reliabilityVSAvoidpower efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent changes the voltage parameter supplied to refresh-associated circuits based on operational mode. In normal mode, a high voltage (external voltage VDD or internal voltage VINT) is supplied for smooth circuit operation. In refresh mode, a lower internal voltage is supplied to reduce current consumption, as the amount of charge driven in refresh mode is determined by capacitance and voltage level

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS7339849B2Internal voltage supply circuit of a semiconductor memory device with a refresh mode
Publication Date: 2008.03.04 SK HYNIX INC
  • US7339849B2 patent drawing
  • US7339849B2 patent drawing
  • US7339849B2 patent drawing

AI summary

An internal voltage supply circuit may Include a first internal voltage generator for receiving an external voltage and generating a first internal voltage, a second internal voltage generator for generating a second internal voltage lower than the first internal voltage, and a switching circuit responsive to a control signal, for supplying the second internal voltage to a refresh-associated circuit in a refresh mode and the first internal voltage to the refresh-associated circuit in normal mode. The control signal is enabled in the refresh mode.