Nonvolatile Memory Voltage Compensation for Temperature Variations

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Nonvolatile memory devices face errors in data sensing due to unadjusted bit line and word line operating voltages with respect to temperature variations.

Innovation Solution

A nonvolatile memory device with a temperature unit that determines the temperature range and adjusts the power supply voltage for voltage generators, ensuring adaptive compensation of operating voltages across different temperature ranges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If bit line and word line operating voltages are not adjusted according to temperature, then device complexity is reduced, but data sensing accuracy deteriorates

Engineering Contradiction:
Improvedata sensing accuracyVSAvoidvoltage adjustment mechanism complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by adjusting the bit line operating voltage and word line operating voltage based on temperature variations. A temperature sensor detects the current temperature, and control logic selectively applies different voltage compensation values from stored compensation data corresponding to different temperature ranges, thereby optimizing data sensing accuracy under varying thermal conditions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements preliminary action by pre-storing multiple sets of voltage compensation data in memory before operation. Each set corresponds to a specific temperature range, allowing the system to quickly retrieve and apply the appropriate compensation values without real-time calculation, thus reducing computational complexity while maintaining accuracy.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If temperature compensation is implemented, then data sensing accuracy is improved, but device complexity increases

Engineering Contradiction:
Improvedata reliabilityVSAvoidtemperature compensation circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by implementing temperature compensation specifically in the voltage generation circuits for bit lines and word lines, rather than throughout the entire memory device. The compensation is localized to where it is most needed - in the operating voltage generation stages that directly affect data sensing accuracy.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses an intermediary approach by introducing a temperature sensor and control logic unit that mediate between the temperature environment and the voltage generation circuits. This intermediary layer translates temperature conditions into appropriate voltage adjustments without requiring complete redesign of the memory cell structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If voltage compensation is adjusted for each temperature range, then operating performance is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveoperating performanceVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent implements dynamics by making the voltage compensation values dynamic and adaptive rather than fixed. The system continuously monitors temperature and adjusts voltage compensation in real-time based on the current thermal state, allowing optimal performance across varying operating conditions without requiring multiple fixed configurations.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent applies segmentation by dividing the temperature operating range into multiple discrete temperature ranges, each with its own compensation data set. This segmentation allows the system to handle complex temperature-dependent behavior through manageable discrete steps rather than continuous adjustment, simplifying both control logic and manufacturing.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentEP4170656B1Nonvolatile memory device
Publication Date: 2025.02.19 SAMSUNG ELECTRONICS CO LTD
  • EP4170656B1 patent drawingFigure 1
  • EP4170656B1 patent drawingFigure 2
  • EP4170656B1 patent drawingFigure 3

AI summary

Provided is a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a first voltage generator configured to generate a word line operating voltage for each word line of the memory cell array, a second voltage generator configured to generate a bit line operating voltage of the memory cell array, and a temperature unit configured to determine, from a temperature range table, a temperature range for a temperature code according to a real-time temperature of the memory cell array, and to adjust a power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.