Nonvolatile Memory Voltage Control Logic
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Solution Overview
Problem
Current nonvolatile memory devices face inefficiencies in programming and reading operations due to the need for multiple voltage applications across different memory stacks, which increases operation time and reduces performance.
Innovation Solution
A nonvolatile memory device with a stack manager that determines and applies a single set of voltages across multiple memory stacks, allowing for sequential programming and reading operations by using the same voltage levels for cells with similar characteristics, thereby reducing the number of voltage applications required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple voltage applications are used across different memory stacks for programming and reading operations, then each memory stack can be operated independently, but the operation time increases and performance decreases
Solution Approach 1:
The patent merges the voltage application control for multiple memory stacks into a unified system. The control logic determines a single set of voltages that can be applied across multiple memory stacks simultaneously, combining what were previously separate voltage application operations into one coordinated action, thereby reducing total operation time while maintaining reliable independent operation of each stack
2Adaptability or versatility
If multiple voltage applications are used across different memory stacks, then specific voltage levels can be optimized for each stack, but the device complexity and number of voltage applications increase
Solution Approach 1:
The control logic is designed with universal functionality to handle multiple memory stacks. It can determine a single set of voltages that serves multiple stacks simultaneously, making the voltage application system multi-functional rather than requiring separate dedicated voltage control circuits for each stack, thereby reducing device complexity while maintaining adaptability
3Productivity
If a single set of voltages is applied across multiple memory stacks, then operation time is reduced and performance is improved, but the ability to optimize voltage levels for each specific stack is limited
Solution Approach 1:
The control logic dynamically adjusts voltage parameters based on the operational requirements. By determining a single set of voltages that can be applied across multiple stacks, the system changes the voltage parameters in a coordinated manner that maintains optimal performance for all stacks involved, achieving both speed improvement and adequate voltage optimization
Data Source
AI summary
A nonvolatile memory device includes a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory cell region includes a first memory stack comprising first memory cells vertically stacked on each other, and a second memory stack comprising second memory cells vertically stacked on each other. The peripheral circuit region includes a control logic for setting a voltage level of a second voltage applied for a second memory operation to a second memory cell of the second memory cells based on a first voltage applied to a first memory cell of the first memory cells in a first memory operation. Cell characteristics of the first memory cell are determined using the first voltage.