Non-Volatile Memory Voltage Tuning for Wear-Aware Reads
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Solution Overview
Problem
The increased access frequency to rewritable non-volatile memory modules, particularly in artificial intelligence processing circuits, leads to accelerated wear, necessitating a solution to enhance reliability and extend the service life of these modules.
Innovation Solution
An electrical parameter adjustment method is employed, where a single-state read command is sent to read a physical unit based on a specific voltage, and the read result is used to adjust parameters such as read pass voltage and programming pass voltage to improve module reliability and extend service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If access frequency to rewritable non-volatile memory module is increased for AI processing, then processing speed and productivity are improved, but wear rate and reliability deteriorate
Solution Approach 1:
The patent implements dynamic electrical parameter adjustment based on real-time detection of memory module status. The control circuit continuously monitors the memory module and adjusts read pass voltage and programming pass voltage dynamically according to wear conditions, transitioning from static fixed parameters to adaptive dynamic parameters that respond to actual memory state changes.
Solution Approach 2:
The patent changes electrical parameters (read pass voltage and programming pass voltage) based on memory module status. When wear is detected, the system adjusts these voltage parameters to optimize performance and reliability, transforming the memory operation from fixed parameter mode to variable parameter mode that adapts to degradation.
2Reliability
If electrical parameters are adjusted dynamically, then reliability is improved, but device complexity increases
Solution Approach 1:
The control circuit autonomously detects memory module status and adjusts electrical parameters without external intervention. The system performs self-diagnosis and self-adjustment by monitoring its own state and modifying operating parameters accordingly, eliminating the need for complex external monitoring and control systems.
Solution Approach 2:
The patent implements a feedback mechanism where the control circuit detects the status of the memory module and uses this information to adjust electrical parameters. This closed-loop feedback system continuously monitors performance and reliability indicators, then modifies operating parameters to optimize both reliability and complexity balance.
Data Source
AI summary
An electrical parameter adjustment method, a memory storage device, and a memory control circuit unit are provided. The method includes: detecting a status of a rewritable non-volatile memory module; in response to the status of the rewritable non-volatile memory module meeting a first condition, sending a single-state read command, wherein the single-state read command instructs reading a first physical unit based on a specific voltage, and the specific voltage is a read pass voltage corresponding to the first physical unit; and adjusting at least one electrical parameter of the rewritable non-volatile memory according to a read result of the single-state read command.