Memory Subsystem Wear Leveling via Access Counters

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Solution Overview

Problem

The uneven wear of memory cells in memory devices due to differential access operations leads to a shortened device life, as some cells are accessed more frequently than others, causing premature wear and reducing the overall effectiveness of the memory sub-system.

Innovation Solution

A memory sub-system with a counter configured to track access operations on specific sets of memory cells, initiating maintenance operations such as wear leveling when a threshold is reached, thereby distributing wear evenly across all cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If access operations are performed on memory cells, then data storage and retrieval functionality is provided, but uneven wear occurs on memory cells leading to shortened device life

Engineering Contradiction:
Improvedata storage and retrieval functionalityVSAvoiddevice life
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The memory device is divided into multiple memory sets, and access operations are distributed across these segments. The counter tracks access operations for each memory set separately, enabling targeted wear leveling on specific segments rather than treating the entire memory device uniformly. This segmentation allows the system to manage wear at a granular level, extending overall device life while maintaining productivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system dynamically changes operational parameters by monitoring the count of access operations and comparing it against a threshold. When the threshold is reached, wear leveling operations are triggered to redistribute wear across memory cells. This parameter-based control mechanism adjusts the wear distribution pattern based on actual usage, resolving the contradiction between maintaining access functionality and extending device life.

Inventive Principle:
Principle #35Parameter changes

2Speed

If frequent access operations are performed on specific memory cells, then data accessibility is improved, but wear on those cells increases leading to premature failure

Engineering Contradiction:
Improvedata accessibilityVSAvoidmemory cell lifespan
Core Design Contradiction:
SpeedVSDuration of action of stationary object

Solution Approach 1:

The counter provides feedback on the number of access operations performed on each memory set. This feedback mechanism enables the system to detect when a memory set is approaching its wear threshold and trigger wear leveling operations accordingly. The feedback loop continuously monitors and adjusts wear distribution, allowing frequent access operations without compromising individual cell lifespan.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

Wear leveling operations are performed preliminarily before memory cells reach their failure point. By monitoring access counts and triggering wear leveling when thresholds are approached, the system proactively redistributes wear across memory cells before any single cell suffers premature failure. This preliminary action maintains both speed and duration.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If wear leveling operations are initiated frequently, then even wear distribution is achieved, but system overhead and complexity increase

Engineering Contradiction:
Improvewear distribution uniformityVSAvoidmaintenance operation complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of performing wear leveling operations continuously or at every access, the system applies partial action by triggering wear leveling only when the access count reaches a predetermined threshold. This selective approach achieves sufficient wear distribution uniformity without the excessive overhead of frequent operations, balancing reliability improvements with acceptable system complexity.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS11861167B2Maintenance operations for memory devices
Publication Date: 2024.01.02 MICRON TECHNOLOGY INC
  • US11861167B2 patent drawing
  • US11861167B2 patent drawing
  • US11861167B2 patent drawing

AI summary

Methods, systems, and devices for performing an access operation on a memory cell, incrementing a value of a first counter based on performing the access operation on the memory cell, determining that the incremented value of the first counter satisfies a threshold, incrementing a value of a second counter based on determining that the incremented value of the first counter satisfies the threshold, and performing a maintenance operation on the memory cell based on determining that the incremented value of the first counter satisfies the threshold are described.