Memory Wear Leveling With Multiple Gap Locations

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing memory devices face issues with uneven wear and tear of memory cells due to disproportionate access, leading to reduced lifespan and potential data loss, particularly in non-volatile memory technologies like NOR, NAND, and non-volatile RAM, where excessive accesses degrade physical cells or cause data loss in DRAM.

Innovation Solution

Implementing a wear leveling start-gap algorithm using multiple gap locations within a pool of memory cells, distributing access evenly across a larger set of cells by moving user data to different physical cells, and utilizing error correction during wear leveling to prevent uncorrectable errors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single gap location is used in wear leveling, then the algorithm is simpler to implement, but the wear distribution across memory cells is less effective

Engineering Contradiction:
Improvewear leveling algorithm complexityVSAvoidwear distribution effectiveness
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent divides the single gap location into multiple gap locations (first gap location, second gap location, etc.) distributed across different sections of the memory array. This segmentation allows the wear leveling algorithm to operate in multiple sections simultaneously, improving wear distribution effectiveness while maintaining manageable algorithm complexity through systematic organization of the multiple gap locations.

Inventive Principle:
Principle #1Segmentation

2Reliability

If multiple gap locations are used in wear leveling, then wear distribution across memory cells is improved, but the algorithm complexity increases

Engineering Contradiction:
Improvewear distribution effectivenessVSAvoidwear leveling algorithm complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The memory array is divided into multiple sections with each section having its own gap location. This segmentation approach improves wear distribution by covering more memory areas while managing complexity through modular organization where each section can be independently managed.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements periodic movement of multiple gap locations through their respective sections. By cycling the gap locations periodically across different memory cells, the system achieves comprehensive wear distribution while the periodic nature provides a structured, manageable algorithm that doesn't excessively increase complexity.

Inventive Principle:
Principle #19Periodic action

3Speed

If memory cells are accessed disproportionately, then data access speed may be improved for frequently accessed data, but memory cell lifespan is reduced

Engineering Contradiction:
Improvedata access speedVSAvoidmemory cell lifespan
Core Design Contradiction:
SpeedVSDuration of action of stationary object

Solution Approach 1:

The wear leveling algorithm proactively moves data before memory cells become worn out by monitoring and redistributing access patterns. By preliminarily relocating data from frequently accessed cells to less-used cells, the system prevents premature cell failure while maintaining fast access speeds through optimized data placement.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent dynamically changes the physical location parameter of stored data based on access frequency and wear levels. By changing which physical memory cells store which logical data, the system balances access speed requirements with cell lifespan extension, allowing frequently accessed data to be quickly retrieved while distributing the wear burden across all cells.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250341971A1Wear leveling start-gap algorithm using multiple gap locations
Publication Date: 2025.11.06 MICRON TECHNOLOGY INC
  • US20250341971A1 patent drawing
  • US20250341971A1 patent drawing
  • US20250341971A1 patent drawing

AI summary

Systems, methods, and apparatus for memory management operations in a memory device. In one approach, wear leveling for the memory device is performed using a start-gap algorithm. The wear leveling is implemented using multiple gap locations in a single pool. In response to a memory management command, one or more gap locations and corresponding user data are moved. After moving the user data, one or more pointers to the gap locations are updated. A start location pointer for the pool is updated each time the gap locations complete a cycle of movement in the pool.